Comment on "Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells" [Appl. Phys. Lett. 79, 2594 (2001)]

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Abstract

This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering.
LanguageEnglish
Article number3100
Number of pages2
JournalApplied Physics Letters
Volume81
Issue number16
DOIs
Publication statusPublished - 14 Oct 2002

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interruption
entry
light emission
indium
quantum wells

Keywords

  • energies
  • dots
  • indium compounds
  • gallium compounds
  • wide band gap semiconductors

Cite this

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title = "Comment on {"}Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells{"} [Appl. Phys. Lett. 79, 2594 (2001)]",
abstract = "This entry is a comment on {"}Effect of growth interruptions on the light emission and indium clustering.",
keywords = "energies, dots, indium compounds, gallium compounds, wide band gap semiconductors",
author = "Martin, {R W} and O'Donnell, {K P} and Edwards, {P R}",
year = "2002",
month = "10",
day = "14",
doi = "10.1063/1.1515886",
language = "English",
volume = "81",
journal = "Applied Physics Letters",
issn = "0003-6951",
number = "16",

}

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AU - Martin, R W

AU - O'Donnell, K P

AU - Edwards, P R

PY - 2002/10/14

Y1 - 2002/10/14

N2 - This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering.

AB - This entry is a comment on "Effect of growth interruptions on the light emission and indium clustering.

KW - energies

KW - dots

KW - indium compounds

KW - gallium compounds

KW - wide band gap semiconductors

U2 - 10.1063/1.1515886

DO - 10.1063/1.1515886

M3 - Comment/debate

VL - 81

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 3100

ER -