Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

N.M. Boyall, K. Durose, T.Y. Liu, A. Trampert, I.M. Watson

Research output: Contribution to journalArticle

Abstract

A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.
LanguageEnglish
Pages289-292
Number of pages3
JournalInstitute of Physics Conference Series
Volume180
Publication statusPublished - 2003

Fingerprint

cathodoluminescence
inhomogeneity
quantum wells
luminescence
transmission electron microscopy
crystal defects
accumulators
nitrides
spectrometers
defects
diffraction
spectroscopy

Keywords

  • optical-properties
  • luminescence
  • quantum wells

Cite this

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title = "Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells",
abstract = "A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.",
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Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. / Boyall, N.M.; Durose, K.; Liu, T.Y.; Trampert, A.; Watson, I.M.

In: Institute of Physics Conference Series, Vol. 180, 2003, p. 289-292.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

AU - Boyall, N.M.

AU - Durose, K.

AU - Liu, T.Y.

AU - Trampert, A.

AU - Watson, I.M.

PY - 2003

Y1 - 2003

N2 - A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

AB - A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

KW - optical-properties

KW - luminescence

KW - quantum wells

M3 - Article

VL - 180

SP - 289

EP - 292

JO - Institute of Physics Conference Series

T2 - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

ER -