Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

N.M. Boyall; K. Durose; T.Y. Liu; A. Trampert; I.M. Watson

Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

N.M. Boyall, K. Durose, T.Y. Liu, A. Trampert, I.M. Watson

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Abstract

A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

Original language	English
Pages (from-to)	289-292
Number of pages	3
Journal	Institute of Physics Conference Series
Volume	180
Publication status	Published - 2003

Keywords

optical-properties
luminescence
quantum wells

Cite this

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title = "Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells",

abstract = "A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.",

keywords = "optical-properties, luminescence, quantum wells",

author = "N.M. Boyall and K. Durose and T.Y. Liu and A. Trampert and I.M. Watson",

year = "2003",

language = "English",

volume = "180",

pages = "289--292",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

AU - Boyall, N.M.

AU - Durose, K.

AU - Liu, T.Y.

AU - Trampert, A.

AU - Watson, I.M.

PY - 2003

Y1 - 2003

N2 - A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

AB - A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.

KW - optical-properties

KW - luminescence

KW - quantum wells

M3 - Article

SN - 0951-3248

VL - 180

SP - 289

EP - 292

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -

Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

Abstract

Keywords

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