Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells

N.M. Boyall, K. Durose, T.Y. Liu, A. Trampert, I.M. Watson

Research output: Contribution to journalArticle

Abstract

A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.
Original languageEnglish
Pages (from-to)289-292
Number of pages3
JournalInstitute of Physics Conference Series
Volume180
Publication statusPublished - 2003

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Keywords

  • optical-properties
  • luminescence
  • quantum wells

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