Abstract
A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.
| Original language | English |
|---|---|
| Pages (from-to) | 289-292 |
| Number of pages | 3 |
| Journal | Institute of Physics Conference Series |
| Volume | 180 |
| Publication status | Published - 2003 |
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Keywords
- optical-properties
- luminescence
- quantum wells
Cite this
Boyall, N. M., Durose, K., Liu, T. Y., Trampert, A., & Watson, I. M. (2003). Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. Institute of Physics Conference Series, 180, 289-292.