A TEM fitted with a cathodoluminescence (CL) light collector and an optical spectrometer has been used to investigate spatially and spectrally resolved luminescence phenomena in two epitaxial nitride systems. Luminescence from an InxGa1-xN (x=0.101) quantum well was found to be inhomogeneous on the scale of -0.1 mum, but line-scans recorded at and near the peak of quantum well emission (3.06eV, 405nm) did not implicate any particular physical mechanism. Spectroscopy of (1100)GaN/(100)gammaLiAlO(2) revealed a defect related peak at about 3.3eV. Using diffraction contrast imaging and monochromatic CL line-scans in the TEM it was shown that this emission is directly correlated to intrinsic basal plane stacking faults in the GaN.
|Number of pages||3|
|Journal||Institute of Physics Conference Series|
|Publication status||Published - 2003|
- quantum wells
Boyall, N. M., Durose, K., Liu, T. Y., Trampert, A., & Watson, I. M. (2003). Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells. Institute of Physics Conference Series, 180, 289-292.