Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN

G. Naresh-Kumar, J. Bruckbauer, P. R. Edwards, S. Kraeusel, B. Hourahine, R. W. Martin, M. J. Kappers, M. A. Moram, S. Lovelock, R. A. Oliver, C. J. Humphreys, C. Trager-Cowan

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.
LanguageEnglish
Pages55-60
Number of pages6
JournalMicroscopy and Microanalysis
Volume20
Issue number1
Early online date12 Nov 2013
DOIs
Publication statusPublished - Feb 2014

Fingerprint

Cathodoluminescence
cathodoluminescence
Dislocations (crystals)
Electrons
Imaging techniques
Edge dislocations
electrons
Light emission
Crystal lattices
Nitrides
Luminescence
Atomic force microscopy
Semiconductor materials
screw dislocations
edge dislocations
image contrast
screws
Thin films
Scanning electron microscopy
crystal lattices

Keywords

  • electron channeling
  • cathodoluminescence studies
  • threading
  • dislocations
  • GaN

Cite this

@article{e53d43bba59646b6966a5ec87c6049cf,
title = "Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN",
abstract = "We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.",
keywords = "electron channeling, cathodoluminescence studies, threading, dislocations, GaN",
author = "G. Naresh-Kumar and J. Bruckbauer and Edwards, {P. R.} and S. Kraeusel and B. Hourahine and Martin, {R. W.} and Kappers, {M. J.} and Moram, {M. A.} and S. Lovelock and Oliver, {R. A.} and Humphreys, {C. J.} and C. Trager-Cowan",
year = "2014",
month = "2",
doi = "10.1017/S1431927613013755",
language = "English",
volume = "20",
pages = "55--60",
journal = "Microscopy and Microanalysis",
issn = "1431-9276",
number = "1",

}

Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. / Naresh-Kumar, G.; Bruckbauer, J.; Edwards, P. R.; Kraeusel, S.; Hourahine, B.; Martin, R. W.; Kappers, M. J.; Moram, M. A.; Lovelock, S.; Oliver, R. A.; Humphreys, C. J.; Trager-Cowan, C.

In: Microscopy and Microanalysis, Vol. 20, No. 1, 02.2014, p. 55-60.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN

AU - Naresh-Kumar, G.

AU - Bruckbauer, J.

AU - Edwards, P. R.

AU - Kraeusel, S.

AU - Hourahine, B.

AU - Martin, R. W.

AU - Kappers, M. J.

AU - Moram, M. A.

AU - Lovelock, S.

AU - Oliver, R. A.

AU - Humphreys, C. J.

AU - Trager-Cowan, C.

PY - 2014/2

Y1 - 2014/2

N2 - We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

AB - We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black–white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

KW - electron channeling

KW - cathodoluminescence studies

KW - threading

KW - dislocations

KW - GaN

U2 - 10.1017/S1431927613013755

DO - 10.1017/S1431927613013755

M3 - Article

VL - 20

SP - 55

EP - 60

JO - Microscopy and Microanalysis

T2 - Microscopy and Microanalysis

JF - Microscopy and Microanalysis

SN - 1431-9276

IS - 1

ER -