Charge transport in nanocrystal wires created by direct electron beam writing

S. Jacke, J. L. Plaza, J. P. Wilcoxon, R. E. Palmer, P. Beecher, G. De Marzi, G. Redmond, A. J. Quinn, Y. Chen

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The authors report the fabrication and electrical characterisation of nanowires created via direct electron beam writing in films of passivated gold nanocrystals. Charge transport measurements yield room temperature resistances in the range 10(5) - 10(8) Omega. Variable temperature measurements yield two distinct sets of characteristics: activated conduction (high resistance) consistent with weakly coupled metal nanocrystals separated by alkyl-thiol tunnel barriers and quasi-localised behaviour (low resistance) consistent with stronger coupling between granular metallic islands in a carbonaceous matrix. The data indicate that electron beam writing is a promising method for local manipulation of inter-nanocrystal coupling in nanocrystal arrays.

Original languageEnglish
Pages (from-to)274-277
Number of pages4
JournalMicro and Nano Letters
Volume5
Issue number5
DOIs
Publication statusPublished - Oct 2010

Keywords

  • passivated gold nanoclusters
  • metal insulator transition
  • assemblies
  • nanoparticles
  • monolayers
  • superlattices
  • arrays

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  • Cite this

    Jacke, S., Plaza, J. L., Wilcoxon, J. P., Palmer, R. E., Beecher, P., De Marzi, G., Redmond, G., Quinn, A. J., & Chen, Y. (2010). Charge transport in nanocrystal wires created by direct electron beam writing. Micro and Nano Letters, 5(5), 274-277. https://doi.org/10.1049/mnl.2010.0048