Charge state hysteresis in semiconductor quantum dots

C. H. Yang, A. Rossi, N. S. Lai, R. Leon, W. H. Lim, A. S. Dzurak

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in double dots coupled to two reservoirs. We demonstrate that this type of device operates like a single-electron memory latch.

Original languageEnglish
Article number183505
JournalApplied Physics Letters
Volume105
Issue number18
DOIs
Publication statusPublished - 3 Nov 2014

Keywords

  • semiconductor quantum dots
  • silicon quantum dots
  • quantum computation

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    Yang, C. H., Rossi, A., Lai, N. S., Leon, R., Lim, W. H., & Dzurak, A. S. (2014). Charge state hysteresis in semiconductor quantum dots. Applied Physics Letters, 105(18), [183505]. https://doi.org/10.1063/1.4901218