Charge detection in phosphorus-doped silicon double quantum dots

A. Rossi; T. Ferrus; G. J. Podd; D. A. Williams

doi:10.1063/1.3524490

Charge detection in phosphorus-doped silicon double quantum dots

A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Physics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

The ability to control and detect single electrons is paramount for the implementation of a scalable charge-based quantum computer and single-electron memory devices. Here, we report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) that are electrically connected to an electron reservoir. The sensing device is a single-electron transistor patterned in close proximity to the DQD. We observe steplike behavior and shifts of the Coulomb blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that these features can be used to detect changes in the DQD charge occupancy. © 2010 American Institute of Physics.

Language	English
Article number	223506
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	10.1063/1.3524490
Publication status	Published - 29 Nov 2010

Fingerprint

phosphorus

quantum dots

silicon

single electron transistors

electrons

quantum computers

proximity

capacitance

oscillations

shift

detectors

Keywords

single electron transistors
coulomb blockade
current voltage characteristics
electrons

Cite this

Rossi, A., Ferrus, T., Podd, G. J., & Williams, D. A. (2010). Charge detection in phosphorus-doped silicon double quantum dots. Applied Physics Letters, 97(22), [223506]. https://doi.org/10.1063/1.3524490

Rossi, A. ; Ferrus, T. ; Podd, G. J. ; Williams, D. A. / Charge detection in phosphorus-doped silicon double quantum dots. In: Applied Physics Letters. 2010 ; Vol. 97, No. 22.

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Rossi, A, Ferrus, T, Podd, GJ & Williams, DA 2010, 'Charge detection in phosphorus-doped silicon double quantum dots' Applied Physics Letters, vol. 97, no. 22, 223506. https://doi.org/10.1063/1.3524490

Charge detection in phosphorus-doped silicon double quantum dots. / Rossi, A.; Ferrus, T.; Podd, G. J.; Williams, D. A.

In: Applied Physics Letters, Vol. 97, No. 22, 223506, 29.11.2010.

Research output: Contribution to journal › Article

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