Charge detection in phosphorus-doped silicon double quantum dots

A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The ability to control and detect single electrons is paramount for the implementation of a scalable charge-based quantum computer and single-electron memory devices. Here, we report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) that are electrically connected to an electron reservoir. The sensing device is a single-electron transistor patterned in close proximity to the DQD. We observe steplike behavior and shifts of the Coulomb blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that these features can be used to detect changes in the DQD charge occupancy. © 2010 American Institute of Physics.

LanguageEnglish
Article number223506
Number of pages3
JournalApplied Physics Letters
Volume97
Issue number22
DOIs
Publication statusPublished - 29 Nov 2010

Fingerprint

phosphorus
quantum dots
silicon
single electron transistors
electrons
quantum computers
proximity
capacitance
oscillations
shift
detectors

Keywords

  • single electron transistors
  • coulomb blockade
  • current voltage characteristics
  • electrons

Cite this

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Charge detection in phosphorus-doped silicon double quantum dots. / Rossi, A.; Ferrus, T.; Podd, G. J.; Williams, D. A.

In: Applied Physics Letters, Vol. 97, No. 22, 223506, 29.11.2010.

Research output: Contribution to journalArticle

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