Projects per year
Semiconductor nanowire (NW) lasers are a promising technology for the realization of coherent optical sources with ultrasmall footprint. To fully realize their potential in on-chip photonic systems, scalable methods are required for dealing with large populations of inhomogeneous devices that are typically randomly distributed on host substrates. In this work two complementary, high-throughput techniques are combined: the characterization of nanowire laser populations using automated optical microscopy, and a high-accuracy transfer-printing process with automatic device spatial registration and transfer. Here, a population of NW lasers is characterized, binned by threshold energy density, and subsequently printed in arrays onto a secondary substrate. Statistical analysis of the transferred and control devices shows that the transfer process does not incur measurable laser damage, and the threshold binning can be maintained. Analysis on the threshold and mode spectra of the device populations proves the potential for using NW lasers for integrated systems fabrication.
- III-V nanowire lasers