Characterization of the blue emission of Tm/Er co-implanted GaN

Iman Roqan; Carol Trager-Cowan; Ben Hourahine; Katharina Lorenz; Emilio Nogales; Kevin P. O'Donnell; Robert W. Martin; Eduardo Alves; S. Ruffenach; Olivier Briot

doi:10.1557/PROC-0892-FF23-13

Characterization of the blue emission of Tm/Er co-implanted GaN

Iman Roqan, Carol Trager-Cowan, Ben Hourahine, Katharina Lorenz, Emilio Nogales, Kevin P. O'Donnell, Robert W. Martin, Eduardo Alves, S. Ruffenach, Olivier Briot

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

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Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

Original language	English
Title of host publication	GaN, AIN, InN and Related Materials
Editors	M. Kuball , T. Mukai, T.H. Myers, J.M. Redwing
Place of Publication	Warrendale
Pages	599-604
Number of pages	5
DOIs	https://doi.org/10.1557/PROC-0892-FF23-13
Publication status	Published - Mar 2006
Event	Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States Duration: 28 Nov 2005 → 2 Dec 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Publisher	Materials Research Society
Volume	892
ISSN (Print)	0272-9172

Conference

Conference	Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
Country/Territory	United States
City	Boston
Period	28/11/05 → 2/12/05

Keywords

tm-doped alxga1-xn
photoluminescence
cathodoluminescence
ions
EU
ER
ion-implantation
nitride
luminescence

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10.1557/PROC-0892-FF23-13

Roqan-et-al-MRS2006-blue-emission-of-Tm-Er-co-implanted-GaNAccepted author manuscript, 161 KB

Cite this

Roqan, I., Trager-Cowan, C., Hourahine, B., Lorenz, K., Nogales, E., O'Donnell, K. P., Martin, R. W., Alves, E., Ruffenach, S., & Briot, O. (2006). Characterization of the blue emission of Tm/Er co-implanted GaN. In M. Kuball , T. Mukai, T. H. Myers, & J. M. Redwing (Eds.), GaN, AIN, InN and Related Materials (pp. 599-604). (Materials Research Society Symposium Proceedings; Vol. 892).. https://doi.org/10.1557/PROC-0892-FF23-13

@inproceedings{8ddd6671ccbb44edb0bdf79e38f9e2fd,

title = "Characterization of the blue emission of Tm/Er co-implanted GaN",

abstract = "Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples. ",

keywords = "tm-doped alxga1-xn, photoluminescence, cathodoluminescence, ions, EU, ER , ion-implantation, nitride, luminescence",

author = "Iman Roqan and Carol Trager-Cowan and Ben Hourahine and Katharina Lorenz and Emilio Nogales and O'Donnell, {Kevin P.} and Martin, {Robert W.} and Eduardo Alves and S. Ruffenach and Olivier Briot",

year = "2006",

month = mar,

doi = "10.1557/PROC-0892-FF23-13",

language = "English",

isbn = "9781558998469 ",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "599--604",

editor = "{Kuball }, {M. } and Mukai, {T. } and T.H. Myers and Redwing, {J.M. }",

booktitle = "GaN, AIN, InN and Related Materials",

}

Roqan, I, Trager-Cowan, C , Hourahine, B, Lorenz, K, Nogales, E, O'Donnell, KP, Martin, RW, Alves, E, Ruffenach, S & Briot, O 2006, Characterization of the blue emission of Tm/Er co-implanted GaN. in M Kuball , T Mukai, TH Myers & JM Redwing (eds), GaN, AIN, InN and Related Materials. Materials Research Society Symposium Proceedings, vol. 892, Warrendale, pp. 599-604, Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting , Boston, United States, 28/11/05. https://doi.org/10.1557/PROC-0892-FF23-13

Characterization of the blue emission of Tm/Er co-implanted GaN. / Roqan, Iman; Trager-Cowan, Carol ; Hourahine, Ben et al.
GaN, AIN, InN and Related Materials. ed. / M. Kuball ; T. Mukai; T.H. Myers; J.M. Redwing. Warrendale, 2006. p. 599-604 (Materials Research Society Symposium Proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

TY - GEN

T1 - Characterization of the blue emission of Tm/Er co-implanted GaN

AU - Roqan, Iman

AU - Trager-Cowan, Carol

AU - Hourahine, Ben

AU - Lorenz, Katharina

AU - Nogales, Emilio

AU - O'Donnell, Kevin P.

AU - Martin, Robert W.

AU - Alves, Eduardo

AU - Ruffenach, S.

AU - Briot, Olivier

PY - 2006/3

Y1 - 2006/3

N2 - Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

AB - Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

KW - tm-doped alxga1-xn

KW - photoluminescence

KW - cathodoluminescence

KW - ions

KW - EU

KW - ER

KW - ion-implantation

KW - nitride

KW - luminescence

UR - http://journals.cambridge.org/action/displayJournal?jid=OPL

U2 - 10.1557/PROC-0892-FF23-13

DO - 10.1557/PROC-0892-FF23-13

M3 - Conference contribution book

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 599

EP - 604

BT - GaN, AIN, InN and Related Materials

A2 - Kuball , M.

A2 - Mukai, T.

A2 - Myers, T.H.

A2 - Redwing, J.M.

CY - Warrendale

T2 - Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Characterization of the blue emission of Tm/Er co-implanted GaN

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