Characterization of the blue emission of Tm/Er co-implanted GaN

Iman Roqan, Carol Trager-Cowan, Ben Hourahine, Katharina Lorenz, Emilio Nogales, Kevin P. O'Donnell, Robert W. Martin, Eduardo Alves, S. Ruffenach, Olivier Briot

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

4 Citations (Scopus)
123 Downloads (Pure)

Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.
Original languageEnglish
Title of host publicationGaN, AIN, InN and Related Materials
EditorsM. Kuball , T. Mukai, T.H. Myers, J.M. Redwing
Place of PublicationWarrendale
Pages599-604
Number of pages5
DOIs
Publication statusPublished - Mar 2006
EventSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume892
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
CountryUnited States
CityBoston
Period28/11/052/12/05

Keywords

  • tm-doped alxga1-xn
  • photoluminescence
  • cathodoluminescence
  • ions
  • EU
  • ER
  • ion-implantation
  • nitride
  • luminescence

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