Characterization of the blue emission of Tm/Er co-implanted GaN

Iman Roqan, Carol Trager-Cowan, Ben Hourahine, Katharina Lorenz, Emilio Nogales, Kevin P. O'Donnell, Robert W. Martin, Eduardo Alves, S. Ruffenach, Olivier Briot

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

4 Citations (Scopus)

Abstract

Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.
LanguageEnglish
Title of host publicationGaN, AIN, InN and Related Materials
EditorsM. Kuball , T. Mukai, T.H. Myers, J.M. Redwing
Place of PublicationWarrendale
Pages599-604
Number of pages5
DOIs
Publication statusPublished - Mar 2006
EventSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials Research Society Symposium Proceedings
PublisherMaterials Research Society
Volume892
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
CountryUnited States
CityBoston
Period28/11/052/12/05

Fingerprint

Cathodoluminescence
cathodoluminescence
Tin
tin
Photoluminescence
Temperature
photoluminescence
Annealing
Ions
annealing
temperature
electron transitions
electron probes
room temperature
Electron transitions
Rare earths
low concentrations
ions
rare earth elements
temperature dependence

Keywords

  • tm-doped alxga1-xn
  • photoluminescence
  • cathodoluminescence
  • ions
  • EU
  • ER
  • ion-implantation
  • nitride
  • luminescence

Cite this

Roqan, I., Trager-Cowan, C., Hourahine, B., Lorenz, K., Nogales, E., O'Donnell, K. P., ... Briot, O. (2006). Characterization of the blue emission of Tm/Er co-implanted GaN. In M. Kuball , T. Mukai, T. H. Myers, & J. M. Redwing (Eds.), GaN, AIN, InN and Related Materials (pp. 599-604). (Materials Research Society Symposium Proceedings; Vol. 892). Warrendale. https://doi.org/10.1557/PROC-0892-FF23-13
Roqan, Iman ; Trager-Cowan, Carol ; Hourahine, Ben ; Lorenz, Katharina ; Nogales, Emilio ; O'Donnell, Kevin P. ; Martin, Robert W. ; Alves, Eduardo ; Ruffenach, S. ; Briot, Olivier. / Characterization of the blue emission of Tm/Er co-implanted GaN. GaN, AIN, InN and Related Materials. editor / M. Kuball ; T. Mukai ; T.H. Myers ; J.M. Redwing. Warrendale, 2006. pp. 599-604 (Materials Research Society Symposium Proceedings).
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title = "Characterization of the blue emission of Tm/Er co-implanted GaN",
abstract = "Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.",
keywords = "tm-doped alxga1-xn, photoluminescence, cathodoluminescence, ions, EU, ER , ion-implantation, nitride, luminescence",
author = "Iman Roqan and Carol Trager-Cowan and Ben Hourahine and Katharina Lorenz and Emilio Nogales and O'Donnell, {Kevin P.} and Martin, {Robert W.} and Eduardo Alves and S. Ruffenach and Olivier Briot",
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Roqan, I, Trager-Cowan, C, Hourahine, B, Lorenz, K, Nogales, E, O'Donnell, KP, Martin, RW, Alves, E, Ruffenach, S & Briot, O 2006, Characterization of the blue emission of Tm/Er co-implanted GaN. in M Kuball , T Mukai, TH Myers & JM Redwing (eds), GaN, AIN, InN and Related Materials. Materials Research Society Symposium Proceedings, vol. 892, Warrendale, pp. 599-604, Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting , Boston, United States, 28/11/05. https://doi.org/10.1557/PROC-0892-FF23-13

Characterization of the blue emission of Tm/Er co-implanted GaN. / Roqan, Iman; Trager-Cowan, Carol; Hourahine, Ben; Lorenz, Katharina; Nogales, Emilio; O'Donnell, Kevin P.; Martin, Robert W.; Alves, Eduardo; Ruffenach, S.; Briot, Olivier.

GaN, AIN, InN and Related Materials. ed. / M. Kuball ; T. Mukai; T.H. Myers; J.M. Redwing. Warrendale, 2006. p. 599-604 (Materials Research Society Symposium Proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Characterization of the blue emission of Tm/Er co-implanted GaN

AU - Roqan, Iman

AU - Trager-Cowan, Carol

AU - Hourahine, Ben

AU - Lorenz, Katharina

AU - Nogales, Emilio

AU - O'Donnell, Kevin P.

AU - Martin, Robert W.

AU - Alves, Eduardo

AU - Ruffenach, S.

AU - Briot, Olivier

N1 - (c) 2006 Cambridge University Press.

PY - 2006/3

Y1 - 2006/3

N2 - Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

AB - Comparative studies have been carried out on the cathodoluminescence (CL) and photoluminescence (PL) properties of GaN implanted with Tin and GaN co-implanted with Tin and a low concentration of Er. Room temperature CL spectra were acquired in an electron probe microanalyser to investigate the rare earth emission. The room temperature CL intensity exhibits a strong dependence on the annealing temperature of the implanted samples. The results of CL temperature dependence are reported for blue emission (similar to 477 nm) which is due to intra 4f-shell electron transitions ((1)G(4)-> H-3(6)) associated with Tm3+ ions. The 477 nm blue CL emission is enhanced strongly as the annealing temperature increases up to 1200 degrees C. Blue PL emission has also been observed from the sample annealed at 1200 degrees C. To our knowledge, this is the first observation of blue PL emission from Tin implanted GaN samples. Intra-4f transitions from the D-1(2) level (similar to 465 nm emission lines) of Tm3+ ions in GaN have been observed in GaN:Tm films at temperatures between 20-200 K. We will discuss the temperature dependent Tm3+ emission in both GaN:Tm,Er and GaN:Tm samples.

KW - tm-doped alxga1-xn

KW - photoluminescence

KW - cathodoluminescence

KW - ions

KW - EU

KW - ER

KW - ion-implantation

KW - nitride

KW - luminescence

UR - http://journals.cambridge.org/action/displayJournal?jid=OPL

U2 - 10.1557/PROC-0892-FF23-13

DO - 10.1557/PROC-0892-FF23-13

M3 - Conference contribution book

SN - 9781558998469

T3 - Materials Research Society Symposium Proceedings

SP - 599

EP - 604

BT - GaN, AIN, InN and Related Materials

A2 - Kuball , M.

A2 - Mukai, T.

A2 - Myers, T.H.

A2 - Redwing, J.M.

CY - Warrendale

ER -

Roqan I, Trager-Cowan C, Hourahine B, Lorenz K, Nogales E, O'Donnell KP et al. Characterization of the blue emission of Tm/Er co-implanted GaN. In Kuball M, Mukai T, Myers TH, Redwing JM, editors, GaN, AIN, InN and Related Materials. Warrendale. 2006. p. 599-604. (Materials Research Society Symposium Proceedings). https://doi.org/10.1557/PROC-0892-FF23-13