Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures

H.D. Sun, R. Macaluso, M.D. Dawson, F. Robert, A.C. Bryce, J.H. Marsh, H. Riechert

Research output: Contribution to journalArticle

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Abstract

Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.
LanguageEnglish
Pages1550-1556
Number of pages6
JournalJournal of Applied Physics
Volume94
Issue number3
DOIs
Publication statusPublished - Aug 2003

Fingerprint

quantum wells
annealing
shift
caps
point defects
secondary ion mass spectrometry
bombardment
sputtering
disorders
vapors
saturation
photoluminescence
optical properties
spectroscopy
excitation
atoms
ions

Keywords

  • gallium compounds
  • indium compounds
  • gallium arsenide
  • III-V semiconductors
  • semiconductor quantum wells
  • chemical interdiffusion
  • rapid thermal annealing
  • silicon compounds
  • spectral line shift
  • energy gap
  • plasma CVD coatings
  • point defects
  • secondary ion mass spectra
  • photoluminescence
  • sputtered coatings

Cite this

Sun, H. D., Macaluso, R., Dawson, M. D., Robert, F., Bryce, A. C., Marsh, J. H., & Riechert, H. (2003). Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures. Journal of Applied Physics, 94(3), 1550-1556. https://doi.org/10.1063/1.1590413
Sun, H.D. ; Macaluso, R. ; Dawson, M.D. ; Robert, F. ; Bryce, A.C. ; Marsh, J.H. ; Riechert, H. / Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 3. pp. 1550-1556.
@article{b0b405c185004d00b37cd6e0949bb0b7,
title = "Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures",
abstract = "Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.",
keywords = "gallium compounds, indium compounds, gallium arsenide, III-V semiconductors, semiconductor quantum wells, chemical interdiffusion, rapid thermal annealing, silicon compounds, spectral line shift, energy gap, plasma CVD coatings, point defects, secondary ion mass spectra, photoluminescence, sputtered coatings",
author = "H.D. Sun and R. Macaluso and M.D. Dawson and F. Robert and A.C. Bryce and J.H. Marsh and H. Riechert",
year = "2003",
month = "8",
doi = "10.1063/1.1590413",
language = "English",
volume = "94",
pages = "1550--1556",
journal = "Journal of Applied Physics",
issn = "0021-8979",
number = "3",

}

Sun, HD, Macaluso, R, Dawson, MD, Robert, F, Bryce, AC, Marsh, JH & Riechert, H 2003, 'Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures' Journal of Applied Physics, vol. 94, no. 3, pp. 1550-1556. https://doi.org/10.1063/1.1590413

Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures. / Sun, H.D.; Macaluso, R.; Dawson, M.D.; Robert, F.; Bryce, A.C.; Marsh, J.H.; Riechert, H.

In: Journal of Applied Physics, Vol. 94, No. 3, 08.2003, p. 1550-1556.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structures

AU - Sun, H.D.

AU - Macaluso, R.

AU - Dawson, M.D.

AU - Robert, F.

AU - Bryce, A.C.

AU - Marsh, J.H.

AU - Riechert, H.

PY - 2003/8

Y1 - 2003/8

N2 - Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.

AB - Rapid thermal annealing combined with SiO2 caps deposited on the surface of samples by different techniques is used to selectively disorder 1.3 mum GaInNAs/GaAs multiquantum wells which have been preannealed in situ to the stage of blueshift saturation. After thermal annealing under specific conditions, a shift in band gap of over 170 meV has been obtained in sputtered SiO2-capped samples, while uncapped and plasma enhanced chemical vapor deposited SiO2-capped samples demonstrated a negligible shift. Quantum well intermixing in sputtered SiO2-capped samples originates from enhanced compositional interdiffusion due to the generation of point defects by ion bombardment during the sputtering process. Secondary ion mass spectrometry has confirmed that the enhanced blueshift was caused by the interdiffusion of group III atoms (In and Ga) between the quantum wells and barriers. Detailed photoluminescence and excitation spectroscopy were performed to study the optical properties of both intermixed and nonintermixed samples.

KW - gallium compounds

KW - indium compounds

KW - gallium arsenide

KW - III-V semiconductors

KW - semiconductor quantum wells

KW - chemical interdiffusion

KW - rapid thermal annealing

KW - silicon compounds

KW - spectral line shift

KW - energy gap

KW - plasma CVD coatings

KW - point defects

KW - secondary ion mass spectra

KW - photoluminescence

KW - sputtered coatings

UR - http://link.aip.org/link/?JAPIAU/94/1550/1

UR - http://dx.doi.org/10.1063/1.1590413

U2 - 10.1063/1.1590413

DO - 10.1063/1.1590413

M3 - Article

VL - 94

SP - 1550

EP - 1556

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 3

ER -