Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

Carol Trager-Cowan, Francis Sweeney, A.J. Wilkinson, P.W. Trimby, A.P. Day, A Gholinia, N.H. Schmidt, P.J. Parbrook, Ian Watson

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.
LanguageEnglish
Title of host publicationGaN, AIN, InN and related materials
EditorsM Kuball, T.H. Myers, J.M. Redwing, T Mukai
Place of PublicationWarrendale
Pages677-682
Number of pages5
Publication statusPublished - 2006
EventSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States
Duration: 28 Nov 20052 Dec 2005

Publication series

NameMaterials research society symposium proceedings
PublisherMaterials Research Society
Volume892
ISSN (Print)0272-9172

Conference

ConferenceSymposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting
CountryUnited States
CityBoston
Period28/11/052/12/05

Fingerprint

nitrides
thin films
diffraction
electrons
image contrast
rims
electron microscopes
spatial resolution
scanning

Keywords

  • plan-view image
  • kikuchi diffraction
  • GAN
  • dislocations
  • microscope
  • strain
  • rocks
  • SEM

Cite this

Trager-Cowan, C., Sweeney, F., Wilkinson, A. J., Trimby, P. W., Day, A. P., Gholinia, A., ... Watson, I. (2006). Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In M. Kuball, T. H. Myers, J. M. Redwing, & T. Mukai (Eds.), GaN, AIN, InN and related materials (pp. 677-682). (Materials research society symposium proceedings; Vol. 892). Warrendale.
Trager-Cowan, Carol ; Sweeney, Francis ; Wilkinson, A.J. ; Trimby, P.W. ; Day, A.P. ; Gholinia, A ; Schmidt, N.H. ; Parbrook, P.J. ; Watson, Ian. / Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. GaN, AIN, InN and related materials. editor / M Kuball ; T.H. Myers ; J.M. Redwing ; T Mukai. Warrendale, 2006. pp. 677-682 (Materials research society symposium proceedings).
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abstract = "In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.",
keywords = "plan-view image, kikuchi diffraction, GAN, dislocations, microscope, strain, rocks, SEM",
author = "Carol Trager-Cowan and Francis Sweeney and A.J. Wilkinson and P.W. Trimby and A.P. Day and A Gholinia and N.H. Schmidt and P.J. Parbrook and Ian Watson",
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Trager-Cowan, C, Sweeney, F, Wilkinson, AJ, Trimby, PW, Day, AP, Gholinia, A, Schmidt, NH, Parbrook, PJ & Watson, I 2006, Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. in M Kuball, TH Myers, JM Redwing & T Mukai (eds), GaN, AIN, InN and related materials. Materials research society symposium proceedings, vol. 892, Warrendale, pp. 677-682, Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting , Boston, United States, 28/11/05.

Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. / Trager-Cowan, Carol; Sweeney, Francis; Wilkinson, A.J.; Trimby, P.W.; Day, A.P.; Gholinia, A; Schmidt, N.H.; Parbrook, P.J.; Watson, Ian.

GaN, AIN, InN and related materials. ed. / M Kuball; T.H. Myers; J.M. Redwing; T Mukai. Warrendale, 2006. p. 677-682 (Materials research society symposium proceedings; Vol. 892).

Research output: Chapter in Book/Report/Conference proceedingConference contribution book

TY - GEN

T1 - Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

AU - Trager-Cowan, Carol

AU - Sweeney, Francis

AU - Wilkinson, A.J.

AU - Trimby, P.W.

AU - Day, A.P.

AU - Gholinia, A

AU - Schmidt, N.H.

AU - Parbrook, P.J.

AU - Watson, Ian

PY - 2006

Y1 - 2006

N2 - In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.

AB - In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.

KW - plan-view image

KW - kikuchi diffraction

KW - GAN

KW - dislocations

KW - microscope

KW - strain

KW - rocks

KW - SEM

M3 - Conference contribution book

SN - 9781558998469

T3 - Materials research society symposium proceedings

SP - 677

EP - 682

BT - GaN, AIN, InN and related materials

A2 - Kuball, M

A2 - Myers, T.H.

A2 - Redwing, J.M.

A2 - Mukai, T

CY - Warrendale

ER -

Trager-Cowan C, Sweeney F, Wilkinson AJ, Trimby PW, Day AP, Gholinia A et al. Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In Kuball M, Myers TH, Redwing JM, Mukai T, editors, GaN, AIN, InN and related materials. Warrendale. 2006. p. 677-682. (Materials research society symposium proceedings).