In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.
|Title of host publication||GaN, AIN, InN and related materials|
|Editors||M Kuball, T.H. Myers, J.M. Redwing, T Mukai|
|Place of Publication||Warrendale|
|Number of pages||5|
|Publication status||Published - 2006|
|Event||Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States|
Duration: 28 Nov 2005 → 2 Dec 2005
|Name||Materials research society symposium proceedings|
|Publisher||Materials Research Society|
|Conference||Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting|
|Period||28/11/05 → 2/12/05|
- plan-view image
- kikuchi diffraction
Trager-Cowan, C., Sweeney, F., Wilkinson, A. J., Trimby, P. W., Day, A. P., Gholinia, A., Schmidt, N. H., Parbrook, P. J., & Watson, I. (2006). Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In M. Kuball, T. H. Myers, J. M. Redwing, & T. Mukai (Eds.), GaN, AIN, InN and related materials (pp. 677-682). (Materials research society symposium proceedings; Vol. 892)..