Abstract
| Language | English |
|---|---|
| Title of host publication | GaN, AIN, InN and related materials |
| Editors | M Kuball, T.H. Myers, J.M. Redwing, T Mukai |
| Place of Publication | Warrendale |
| Pages | 677-682 |
| Number of pages | 5 |
| Publication status | Published - 2006 |
| Event | Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting - Boston, United States Duration: 28 Nov 2005 → 2 Dec 2005 |
Publication series
| Name | Materials research society symposium proceedings |
|---|---|
| Publisher | Materials Research Society |
| Volume | 892 |
| ISSN (Print) | 0272-9172 |
Conference
| Conference | Symposium on GaN, AIN, InN Related Materials held at the 2005 MRS Fall Meeting |
|---|---|
| Country | United States |
| City | Boston |
| Period | 28/11/05 → 2/12/05 |
Fingerprint
Keywords
- plan-view image
- kikuchi diffraction
- GAN
- dislocations
- microscope
- strain
- rocks
- SEM
Cite this
}
Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. / Trager-Cowan, Carol; Sweeney, Francis; Wilkinson, A.J.; Trimby, P.W.; Day, A.P.; Gholinia, A; Schmidt, N.H.; Parbrook, P.J.; Watson, Ian.
GaN, AIN, InN and related materials. ed. / M Kuball; T.H. Myers; J.M. Redwing; T Mukai. Warrendale, 2006. p. 677-682 (Materials research society symposium proceedings; Vol. 892).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book
TY - GEN
T1 - Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging
AU - Trager-Cowan, Carol
AU - Sweeney, Francis
AU - Wilkinson, A.J.
AU - Trimby, P.W.
AU - Day, A.P.
AU - Gholinia, A
AU - Schmidt, N.H.
AU - Parbrook, P.J.
AU - Watson, Ian
PY - 2006
Y1 - 2006
N2 - In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.
AB - In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.
KW - plan-view image
KW - kikuchi diffraction
KW - GAN
KW - dislocations
KW - microscope
KW - strain
KW - rocks
KW - SEM
M3 - Conference contribution book
SN - 9781558998469
T3 - Materials research society symposium proceedings
SP - 677
EP - 682
BT - GaN, AIN, InN and related materials
A2 - Kuball, M
A2 - Myers, T.H.
A2 - Redwing, J.M.
A2 - Mukai, T
CY - Warrendale
ER -