Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

K.S. Kim; T. Kim; Y.J. Park; S.I. Baek; Y.W. Kim; H.D. Sun; M.D. Dawson

doi:10.1016/j.jcrysgro.2005.10.143

Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

K.S. Kim, T. Kim, Y.J. Park, S.I. Baek, Y.W. Kim, H.D. Sun, M.D. Dawson

Research output: Contribution to journal › Article

Abstract

Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

Original language	English
Pages (from-to)	620-624
Number of pages	4
Journal	Journal of Crystal Growth
Volume	287
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.10.143
Publication status	Published - 2006

Keywords

photoluminescence
crystals
photonics

Access to Document

10.1016/j.jcrysgro.2005.10.143

http://dx.doi.org/10.1016/j.jcrysgro.2005.10.143

Fingerprint Dive into the research topics of 'Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS'. Together they form a unique fingerprint.

Cite this

@article{cf5d1d3cd3ac41f4a996ae729a449ef0,

title = "Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS",

abstract = "Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.",

keywords = "photoluminescence, crystals, photonics",

author = "K.S. Kim and T. Kim and Y.J. Park and S.I. Baek and Y.W. Kim and H.D. Sun and M.D. Dawson",

year = "2006",

doi = "10.1016/j.jcrysgro.2005.10.143",

language = "English",

volume = "287",

pages = "620--624",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

number = "2",

}

TY - JOUR

T1 - Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

AU - Kim, K.S.

AU - Kim, T.

AU - Park, Y.J.

AU - Baek, S.I.

AU - Kim, Y.W.

AU - Sun, H.D.

AU - Dawson, M.D.

PY - 2006

Y1 - 2006

N2 - Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

AB - Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

KW - photoluminescence

KW - crystals

KW - photonics

UR - http://dx.doi.org/10.1016/j.jcrysgro.2005.10.143

U2 - 10.1016/j.jcrysgro.2005.10.143

DO - 10.1016/j.jcrysgro.2005.10.143

M3 - Article

VL - 287

SP - 620

EP - 624

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -