Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

K.S. Kim, T. Kim, Y.J. Park, S.I. Baek, Y.W. Kim, H.D. Sun, M.D. Dawson

Research output: Contribution to journal › Article

Abstract

Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.
Original languageEnglish
Pages (from-to)620-624
Number of pages4
JournalJournal of Crystal Growth
Volume287
Issue number2
DOIs
Publication statusPublished - 2006

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Metallorganic vapor phase epitaxy
Secondary ion mass spectrometry
Semiconductor quantum wells
secondary ion mass spectrometry
quantum wells
Imaging techniques
structural analysis
blue shift
Structural analysis
Structural properties
Nitrogen
Optical properties
trends
optical properties
nitrogen

Keywords

  • photoluminescence
  • crystals
  • photonics

Cite this

Kim, K.S. ; Kim, T. ; Park, Y.J. ; Baek, S.I. ; Kim, Y.W. ; Sun, H.D. ; Dawson, M.D. / Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. In: Journal of Crystal Growth. 2006 ; Vol. 287, No. 2. pp. 620-624.
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abstract = "Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.",
keywords = "photoluminescence, crystals, photonics",
author = "K.S. Kim and T. Kim and Y.J. Park and S.I. Baek and Y.W. Kim and H.D. Sun and M.D. Dawson",
year = "2006",
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Kim, KS, Kim, T, Park, YJ, Baek, SI, Kim, YW, Sun, HD & Dawson, MD 2006, 'Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS', Journal of Crystal Growth, vol. 287, no. 2, pp. 620-624. https://doi.org/10.1016/j.jcrysgro.2005.10.143

Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. / Kim, K.S.; Kim, T.; Park, Y.J.; Baek, S.I.; Kim, Y.W.; Sun, H.D.; Dawson, M.D.

In: Journal of Crystal Growth, Vol. 287, No. 2, 2006, p. 620-624.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS

AU - Kim, K.S.

AU - Kim, T.

AU - Park, Y.J.

AU - Baek, S.I.

AU - Kim, Y.W.

AU - Sun, H.D.

AU - Dawson, M.D.

PY - 2006

Y1 - 2006

N2 - Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

AB - Structural and optical properties of MOVPE-grown GaInNAs quantum wells (QW) with multiple barriers (InGaAs/GaNAs) have been investigated. Significant improvement of optical performance in the 1.3 μm range is demonstrated with the proposed structure. PLE studies show that the density of N-related localized states can be reduced by the introduction of a thin InGaAs layer due to the improved interface quality. Based on the structural analysis, it is concluded that the InGaAs layer supports the nitrogen redistribution within the QW, resulting in a sharp interface. The blue-shift trend of the GaInNAs QW as a function of the GaNAs thickness can be explained by the reduction of the N content in the GaInNAs QW.

KW - photoluminescence

KW - crystals

KW - photonics

UR - http://dx.doi.org/10.1016/j.jcrysgro.2005.10.143

U2 - 10.1016/j.jcrysgro.2005.10.143

DO - 10.1016/j.jcrysgro.2005.10.143

M3 - Article

VL - 287

SP - 620

EP - 624

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 2

ER -

Kim KS, Kim T, Park YJ, Baek SI, Kim YW, Sun HD et al. Characterization of MOVPE-grown GaInNAs quantum well with multi-barriers by Z-contrast imaging and SIMS. Journal of Crystal Growth. 2006;287(2):620-624. https://doi.org/10.1016/j.jcrysgro.2005.10.143

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