Characteristics of high power VECSELs with silicon carbide heatspreaders

Jennifer Hastie, John Mark Hopkins, Stephane Calvez, C.W. Jeon, David Burns, Martin Dawson, R.H. Abram, A.I. Ferguson

Research output: Contribution to conferencePaper

Abstract

In this paper, we demonstrate that highly advantageous thermal management properties of the SiC heatspreader are wholly compatible with direct diode pumping. We investigate the transverse and longitudinal mode behaviour of the high-power vertical external-cavity surface-emitting semiconductor laser with the intra-cavity heatspreader.
Original languageEnglish
Number of pages1
Publication statusPublished - 22 Jun 2003
Event2003 Conference on Lasers and Electro-Optics Europe -
Duration: 22 Jun 200327 Jun 2003

Conference

Conference2003 Conference on Lasers and Electro-Optics Europe
Period22/06/0327/06/03

Keywords

  • thermal management properties
  • SiC heatspreader
  • direct diode pumping

Fingerprint Dive into the research topics of 'Characteristics of high power VECSELs with silicon carbide heatspreaders'. Together they form a unique fingerprint.

  • Cite this

    Hastie, J., Hopkins, J. M., Calvez, S., Jeon, C. W., Burns, D., Dawson, M., ... Ferguson, A. I. (2003). Characteristics of high power VECSELs with silicon carbide heatspreaders. Paper presented at 2003 Conference on Lasers and Electro-Optics Europe, .