Characteristics of GaInNAsSb VCSELs operating near 1.55µm

James A. Gupta, Stephane Calvez, Nicolas Laurand, Jelmer Weda, David Burns, Daniel Poitras, Geof C. Aers, Martin D. Dawson

Research output: Contribution to journalArticle

Abstract

A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity.
LanguageEnglish
Pages69080E
Number of pages10
JournalProceedings of SPIE: The International Society for Optical Engineering
Volume6908
DOIs
Publication statusPublished - 29 Jan 2008

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Vertical-cavity Surface-emitting Laser (VCSEL)
Surface emitting lasers
Gallium Arsenide
Cavity
Reflectivity
Annealing
cavities
Pump
Pumps
pumps
Laser
antinodes
reflectance
Distributed Bragg reflectors
Optical pumping
Nd:YAG
annealing
Cavity resonators
Epitaxy
Lasers

Keywords

  • vertical cavity surface emitting laser
  • disk laser
  • spectroscopy
  • single-mode operation
  • laser-diodes
  • quantum-wells
  • 1.55-mu-m
  • growth
  • gaas
  • inp
  • mbe

Cite this

Gupta, James A. ; Calvez, Stephane ; Laurand, Nicolas ; Weda, Jelmer ; Burns, David ; Poitras, Daniel ; Aers, Geof C. ; Dawson, Martin D. / Characteristics of GaInNAsSb VCSELs operating near 1.55µm. In: Proceedings of SPIE: The International Society for Optical Engineering. 2008 ; Vol. 6908. pp. 69080E.
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abstract = "A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity.",
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Characteristics of GaInNAsSb VCSELs operating near 1.55µm. / Gupta, James A.; Calvez, Stephane ; Laurand, Nicolas ; Weda, Jelmer; Burns, David ; Poitras, Daniel; Aers, Geof C.; Dawson, Martin D.

In: Proceedings of SPIE: The International Society for Optical Engineering, Vol. 6908, 29.01.2008, p. 69080E.

Research output: Contribution to journalArticle

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AU - Gupta, James A.

AU - Calvez, Stephane

AU - Laurand, Nicolas

AU - Weda, Jelmer

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AU - Poitras, Daniel

AU - Aers, Geof C.

AU - Dawson, Martin D.

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AB - A detailed study of the high-power pulsed operation of C-band optically-pumped GaInNAsSb vertical cavity surface emitting lasers is reported. The devices employ a resonant periodic gain structure grown by molecular beam epitaxy on a GaAs substrate with a 31-pair GaAs/AlAs bottom distributed Bragg reflector and a 4-λ, GaAs-based resonant cavity containing 10 GaInNAsSb quantum wells distributed among the 7 antinodes of the electric field. A dual-pump-band SiO2/TiO2 dielectric top mirror allows efficient optical pumping via low reflectivities at 808nm and 1064nm while providing very high reflectivity at the 1.55μm target emission wavelength. The laser characteristics were evaluated using both a Q-switched Nd:YAG 1064nm pump and a 20W-peak 180ns-pulsed 850nm diode laser. The importance of the gain-cavity detuning was evident from time-dependent spectral measurements of laser material subjected to post-growth annealing at different temperatures between 725 and 775°C. The highest annealing temperature produces the largest blue shift of the gain peak relative to the cavity resonance, resulting in the best power transfer characteristics as well as reduced temperature sensitivity.

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