Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates

Pengfei Tian, Jonathan McKendry, Zheng Gong, Shuailong Zhang, Scott Watson, Dandan Zhu, Ian Watson, Erdan Gu, Anthony E Kelly, Colin J Humphreys, Martin Dawson

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressable 10 × 10 micro-pixelated LED (μLED) arrays with pixel diameters of 45 μm and peak emission at ∼470 nm have been demonstrated. The electrical and optical properties of these μLEDs were compared with those of broad-area LEDs fabricated from the same epistructure. The μLEDs can sustain a much higher current density, up to 6.6 kA/cm2, before thermal rollover. Also, the fabricated μLEDs show good pixel-to-pixel uniformity, which demonstrates potential for low-cost micro-displays. Furthermore, these μLEDs demonstrate a high electrical-to-optical modulation bandwidth of up to ∼270 MHz and are suitable for visible light communication at data transmission rate up to 400 Mbit/s. The electrical-to-optical modulation bandwidth of the μLEDs increases rapidly with injection currents less than ∼6 mA, temporarily saturates at injection currents of ∼6 to ∼35 mA, and gradually increases again with injection currents up to 110 mA. Carrier density dependent recombination processes are responsible for the bandwidth increase at low current, the resistance-capacitance product determines the modulation bandwidth in the saturation region, and self-heating, which changes series resistance of μLEDs, may cause a further bandwidth increase at high current.
LanguageEnglish
Article number033112
Number of pages6
JournalJournal of Applied Physics
Volume115
Issue number3
DOIs
Publication statusPublished - 21 Jan 2014

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light emitting diodes
bandwidth
light modulation
pixels
injection
high current
data transmission
low currents
optical communication
capacitance
electrical properties
current density
saturation
modulation
optical properties
heating
causes
products

Keywords

  • light emitting diode
  • GaN micro light emitting diodes
  • pixel uniformity

Cite this

Tian, Pengfei ; McKendry, Jonathan ; Gong, Zheng ; Zhang, Shuailong ; Watson, Scott ; Zhu, Dandan ; Watson, Ian ; Gu, Erdan ; Kelly, Anthony E ; Humphreys, Colin J ; Dawson, Martin. / Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. In: Journal of Applied Physics. 2014 ; Vol. 115, No. 3.
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abstract = "Using a GaN-based light emitting diode (LED) epitaxial structure grown on Si, individually addressable 10 × 10 micro-pixelated LED (μLED) arrays with pixel diameters of 45 μm and peak emission at ∼470 nm have been demonstrated. The electrical and optical properties of these μLEDs were compared with those of broad-area LEDs fabricated from the same epistructure. The μLEDs can sustain a much higher current density, up to 6.6 kA/cm2, before thermal rollover. Also, the fabricated μLEDs show good pixel-to-pixel uniformity, which demonstrates potential for low-cost micro-displays. Furthermore, these μLEDs demonstrate a high electrical-to-optical modulation bandwidth of up to ∼270 MHz and are suitable for visible light communication at data transmission rate up to 400 Mbit/s. The electrical-to-optical modulation bandwidth of the μLEDs increases rapidly with injection currents less than ∼6 mA, temporarily saturates at injection currents of ∼6 to ∼35 mA, and gradually increases again with injection currents up to 110 mA. Carrier density dependent recombination processes are responsible for the bandwidth increase at low current, the resistance-capacitance product determines the modulation bandwidth in the saturation region, and self-heating, which changes series resistance of μLEDs, may cause a further bandwidth increase at high current.",
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Characteristics and applications of micro-pixelated GaN-based light emitting diodes on Si substrates. / Tian, Pengfei; McKendry, Jonathan; Gong, Zheng; Zhang, Shuailong; Watson, Scott; Zhu, Dandan; Watson, Ian; Gu, Erdan; Kelly, Anthony E; Humphreys, Colin J; Dawson, Martin.

In: Journal of Applied Physics, Vol. 115, No. 3, 033112, 21.01.2014.

Research output: Contribution to journalArticle

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AU - Watson, Scott

AU - Zhu, Dandan

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AU - Humphreys, Colin J

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