Projects per year
Abstract
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
Original language | English |
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Pages | 97-98 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 8 Sept 2013 |
Event | 2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United Kingdom Duration: 8 Sept 2013 → 12 Sept 2013 |
Conference
Conference | 2013 26th IEEE Photonics Conference, IPC 2013 |
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Country/Territory | United Kingdom |
City | Bellevue, WA |
Period | 8/09/13 → 12/09/13 |
Keywords
- III-V semiconductors
- gallium compounds
- indium compounds
- light emitting diodes
- micro-optics
- wide band gap semiconductors
- InGaN
- bit rate 400 Mbit/s
- data transmission rate
- frequency 270 MHz
- high modulation bandwidth
- microdisplay
- microlight emitting diodes on Si substrates
- arrays
- bandwidth
- modulation
- physics
- silicon
- substrates
- GaN
- Si
- micro-LEDs
Fingerprint
Dive into the research topics of 'Characteristics and applications of InGaN micro-light emitting diodes on Si substrates'. Together they form a unique fingerprint.Projects
- 1 Finished
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Ultra-Parallel Visible Light Communications (UP-VLC)
Dawson, M., Calvez, S. & Watson, I.
EPSRC (Engineering and Physical Sciences Research Council)
1/10/12 → 28/02/17
Project: Research