Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian, Jonathan J. D. McKendry, Zheng Gong, Shuailong Zhang, S. Watson, Dandan Zhu, Ian M. Watson, Erdan Gu, Anothony E. Kelly, Colin J. Humphreys, Martin D. Dawson

Research output: Contribution to conferenceOther

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Abstract

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
Original languageEnglish
Pages97-98
Number of pages2
DOIs
Publication statusPublished - 8 Sep 2013
Event2013 26th IEEE Photonics Conference, IPC 2013 - Bellevue, WA, United Kingdom
Duration: 8 Sep 201312 Sep 2013

Conference

Conference2013 26th IEEE Photonics Conference, IPC 2013
CountryUnited Kingdom
CityBellevue, WA
Period8/09/1312/09/13

Keywords

  • III-V semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • micro-optics
  • wide band gap semiconductors
  • InGaN
  • bit rate 400 Mbit/s
  • data transmission rate
  • frequency 270 MHz
  • high modulation bandwidth
  • microdisplay
  • microlight emitting diodes on Si substrates
  • arrays
  • bandwidth
  • modulation
  • physics
  • silicon
  • substrates
  • GaN
  • Si
  • micro-LEDs

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