Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

Pengfei Tian, Jonathan J. D. McKendry, Zheng Gong, Shuailong Zhang, S. Watson, Dandan Zhu, Ian M. Watson, Erdan Gu, Anothony E. Kelly, Colin J. Humphreys, Martin D. Dawson

Research output: Contribution to conferenceOther

Abstract

InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

Conference

Conference2013 26th IEEE Photonics Conference, IPC 2013
CountryUnited Kingdom
CityBellevue, WA
Period8/09/1312/09/13

Fingerprint

data transmission
light emitting diodes
bandwidth
modulation

Keywords

  • III-V semiconductors
  • gallium compounds
  • indium compounds
  • light emitting diodes
  • micro-optics
  • wide band gap semiconductors
  • InGaN
  • bit rate 400 Mbit/s
  • data transmission rate
  • frequency 270 MHz
  • high modulation bandwidth
  • microdisplay
  • microlight emitting diodes on Si substrates
  • arrays
  • bandwidth
  • modulation
  • physics
  • silicon
  • substrates
  • GaN
  • Si
  • micro-LEDs

Cite this

Tian, P., McKendry, J. J. D., Gong, Z., Zhang, S., Watson, S., Zhu, D., ... Dawson, M. D. (2013). Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 97-98. 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United Kingdom. https://doi.org/10.1109/IPCon.2013.6656387
Tian, Pengfei ; McKendry, Jonathan J. D. ; Gong, Zheng ; Zhang, Shuailong ; Watson, S. ; Zhu, Dandan ; Watson, Ian M. ; Gu, Erdan ; Kelly, Anothony E. ; Humphreys, Colin J. ; Dawson, Martin D. / Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United Kingdom.2 p.
@conference{634f4c812f9246cfb19c2091579e21a7,
title = "Characteristics and applications of InGaN micro-light emitting diodes on Si substrates",
abstract = "InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.",
keywords = "III-V semiconductors, gallium compounds, indium compounds, light emitting diodes, micro-optics, wide band gap semiconductors, InGaN, bit rate 400 Mbit/s, data transmission rate, frequency 270 MHz, high modulation bandwidth, microdisplay, microlight emitting diodes on Si substrates, arrays, bandwidth, modulation, physics, silicon, substrates, GaN, Si, micro-LEDs",
author = "Pengfei Tian and McKendry, {Jonathan J. D.} and Zheng Gong and Shuailong Zhang and S. Watson and Dandan Zhu and Watson, {Ian M.} and Erdan Gu and Kelly, {Anothony E.} and Humphreys, {Colin J.} and Dawson, {Martin D.}",
note = "(c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.; 2013 26th IEEE Photonics Conference, IPC 2013 ; Conference date: 08-09-2013 Through 12-09-2013",
year = "2013",
month = "9",
day = "8",
doi = "10.1109/IPCon.2013.6656387",
language = "English",
pages = "97--98",

}

Tian, P, McKendry, JJD, Gong, Z, Zhang, S, Watson, S, Zhu, D, Watson, IM, Gu, E, Kelly, AE, Humphreys, CJ & Dawson, MD 2013, 'Characteristics and applications of InGaN micro-light emitting diodes on Si substrates' 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United Kingdom, 8/09/13 - 12/09/13, pp. 97-98. https://doi.org/10.1109/IPCon.2013.6656387

Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. / Tian, Pengfei; McKendry, Jonathan J. D.; Gong, Zheng; Zhang, Shuailong; Watson, S.; Zhu, Dandan; Watson, Ian M.; Gu, Erdan; Kelly, Anothony E.; Humphreys, Colin J.; Dawson, Martin D.

2013. 97-98 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United Kingdom.

Research output: Contribution to conferenceOther

TY - CONF

T1 - Characteristics and applications of InGaN micro-light emitting diodes on Si substrates

AU - Tian, Pengfei

AU - McKendry, Jonathan J. D.

AU - Gong, Zheng

AU - Zhang, Shuailong

AU - Watson, S.

AU - Zhu, Dandan

AU - Watson, Ian M.

AU - Gu, Erdan

AU - Kelly, Anothony E.

AU - Humphreys, Colin J.

AU - Dawson, Martin D.

N1 - (c) 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

PY - 2013/9/8

Y1 - 2013/9/8

N2 - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

AB - InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.

KW - III-V semiconductors

KW - gallium compounds

KW - indium compounds

KW - light emitting diodes

KW - micro-optics

KW - wide band gap semiconductors

KW - InGaN

KW - bit rate 400 Mbit/s

KW - data transmission rate

KW - frequency 270 MHz

KW - high modulation bandwidth

KW - microdisplay

KW - microlight emitting diodes on Si substrates

KW - arrays

KW - bandwidth

KW - modulation

KW - physics

KW - silicon

KW - substrates

KW - GaN

KW - Si

KW - micro-LEDs

UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6648472

U2 - 10.1109/IPCon.2013.6656387

DO - 10.1109/IPCon.2013.6656387

M3 - Other

SP - 97

EP - 98

ER -

Tian P, McKendry JJD, Gong Z, Zhang S, Watson S, Zhu D et al. Characteristics and applications of InGaN micro-light emitting diodes on Si substrates. 2013. 2013 26th IEEE Photonics Conference, IPC 2013, Bellevue, WA, United Kingdom. https://doi.org/10.1109/IPCon.2013.6656387