Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging

C. Trager-Cowan, F. Sweeney, A. Winkelmann, A.J. Wilkinson, P.W. Trimby, A.P. Day, A. Gholinia, N.H. Schmidt, P.J. Parbrook, I.M. Watson

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In the present paper the authors describe the use of electron backscatter diffraction (EBSD) mapping and electron channelling contrast imaging (in the scanning electron microscope) to study tilt, strain, atomic steps and dislocations in epitaxial GaN thin films. Results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film are shown. From the results it is deduced that EBSD may be used to measure orientation changes of the order of 0·02° and strain changes of order 2 × 10−4 in GaN thin films. It is also demonstrated that channelling contrast in electron channelling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films. In addition the authors will consider the results of the first many-beam dynamical simulations of EBSD patterns from GaN thin films, in which the intensity distributions in the experimental patterns are accurately reproduced.
LanguageEnglish
Pages1352-1358(7)
JournalMaterials Science and Technology
Volume22
Issue number11
DOIs
Publication statusPublished - Nov 2006

Fingerprint

Electron diffraction
Nitrides
nitrides
Imaging techniques
Thin films
Electrons
thin films
diffraction
electrons
Epitaxial films
image contrast
Dislocations (crystals)
Diffraction patterns
Electron microscopes
diffraction patterns
electron microscopes
Scanning
scanning
simulation

Keywords

  • nitride thin films
  • electron backscatter diffraction
  • electron channelling
  • contrast imaging
  • nanoscience

Cite this

Trager-Cowan, C. ; Sweeney, F. ; Winkelmann, A. ; Wilkinson, A.J. ; Trimby, P.W. ; Day, A.P. ; Gholinia, A. ; Schmidt, N.H. ; Parbrook, P.J. ; Watson, I.M. / Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging. In: Materials Science and Technology. 2006 ; Vol. 22, No. 11. pp. 1352-1358(7).
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Trager-Cowan, C, Sweeney, F, Winkelmann, A, Wilkinson, AJ, Trimby, PW, Day, AP, Gholinia, A, Schmidt, NH, Parbrook, PJ & Watson, IM 2006, 'Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging' Materials Science and Technology, vol. 22, no. 11, pp. 1352-1358(7). https://doi.org/10.1179/174328406X130957

Characterisation of nitride thin films by electron backscatter diffraction and electron channelling contrast imaging. / Trager-Cowan, C.; Sweeney, F.; Winkelmann, A.; Wilkinson, A.J.; Trimby, P.W.; Day, A.P.; Gholinia, A.; Schmidt, N.H.; Parbrook, P.J.; Watson, I.M.

In: Materials Science and Technology, Vol. 22, No. 11, 11.2006, p. 1352-1358(7).

Research output: Contribution to journalArticle

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AU - Trager-Cowan, C.

AU - Sweeney, F.

AU - Winkelmann, A.

AU - Wilkinson, A.J.

AU - Trimby, P.W.

AU - Day, A.P.

AU - Gholinia, A.

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AU - Parbrook, P.J.

AU - Watson, I.M.

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