Abstract
| Original language | English |
|---|---|
| Article number | 085010 |
| Number of pages | 1 |
| Journal | Semiconductor Science and Technology |
| Volume | 27 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 27 Jun 2012 |
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Keywords
- cathodoluminescence
- ionoluminescence
- nanoparticles
- nanolithography
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Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE. / Lethy, K J; Edwards, P R; Liu, C; Shields, P A; Allsopp, D W E; Martin, R W.
In: Semiconductor Science and Technology, Vol. 27, No. 8, 085010, 27.06.2012.Research output: Contribution to journal › Article
TY - JOUR
T1 - Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
AU - Lethy, K J
AU - Edwards, P R
AU - Liu, C
AU - Shields, P A
AU - Allsopp, D W E
AU - Martin, R W
PY - 2012/6/27
Y1 - 2012/6/27
N2 - Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.
AB - Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.
KW - cathodoluminescence
KW - ionoluminescence
KW - nanoparticles
KW - nanolithography
UR - http://www.scopus.com/inward/record.url?scp=84863749936&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/27/8/085010
DO - 10.1088/0268-1242/27/8/085010
M3 - Article
VL - 27
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 8
M1 - 085010
ER -