Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE

K J Lethy, P R Edwards, C Liu, P A Shields, D W E Allsopp, R W Martin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.
LanguageEnglish
Article number085010
Number of pages1
JournalSemiconductor Science and Technology
Volume27
Issue number8
DOIs
Publication statusPublished - 27 Jun 2012

Fingerprint

Metallorganic vapor phase epitaxy
Cathodoluminescence
cathodoluminescence
Vapor phase epitaxy
Aluminum Oxide
Coalescence
Sapphire
Masks
Electron beams
Energy gap
Metals
vapor phase epitaxy
coalescing
energy distribution
sapphire
Substrates
masks
electron beams
shift
metals

Keywords

  • cathodoluminescence
  • ionoluminescence
  • nanoparticles
  • nanolithography

Cite this

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title = "Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE",
abstract = "Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.",
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Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE. / Lethy, K J; Edwards, P R; Liu, C; Shields, P A; Allsopp, D W E; Martin, R W.

In: Semiconductor Science and Technology, Vol. 27, No. 8, 085010, 27.06.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE

AU - Lethy, K J

AU - Edwards, P R

AU - Liu, C

AU - Shields, P A

AU - Allsopp, D W E

AU - Martin, R W

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N2 - Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.

AB - Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially and spectrally resolved cathdoluminescence (CL) from such coalesced layers are studied in detail. The observed redshift of the GaN band edge emission with increasing electron beam depth of maximum CL into the coalesced layer is discussed in relation to a carrier-induced peak shift, likely due to Si out-diffusion from the mask material into the GaN. Depth-resolved CL measurements are used to quantify the redshift in terms of bandgap renormalization and strain effects. CL maps showing the GaN near band edge peak energy distribution reveal micron-scale domain-like variations in peak energy and are attributed to the effects of local strain.

KW - cathodoluminescence

KW - ionoluminescence

KW - nanoparticles

KW - nanolithography

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