Cathodoluminescence spectral mapping of III-nitride structures

Research output: Contribution to journalArticle

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Abstract

The application of cathodoluminescence spectral mapping to the characterisation of a range III-nitride semiconductor structures is described. Details are presented of the instrumentation developed to carry out such measurements using an electron probe micro-analyser. The spatial resolution of the luminescence data is ∼100 nm. The technique is enhanced by the ability to simultaneously perform X-ray microanalysis and electron imaging. Results are presented from epitaxially laterally overgrown GaN and InGaN/GaN structures using both single-layer SiO2 and multilayer SiO2/ZrO2 masks. Effects of strain and microcavity formation are resolved. Application of the technique to InGaN epilayers shows spatially-dependent shifts in the peak wavelength of the luminescence spectrum which correlate directly with microscopic variations in the indium content. Regions emitting at lower energy and with decreased intensity are shown to have higher InN contents, mirroring equivalent macroscopic observations. Finally the spectral mapping technique is used to analyse the luminescence from micron-scale selectively grown III-N pyramids, indicating possible formation of quantum dots at the sharp tips.
LanguageEnglish
Pages665-672
Number of pages8
JournalPhysica Status Solidi A - Applications and Materials Science
Volume201
Issue number4
DOIs
Publication statusPublished - Mar 2004

Fingerprint

Cathodoluminescence
cathodoluminescence
Nitrides
nitrides
Luminescence
luminescence
Indium
Microcavities
Electrons
Epilayers
Microanalysis
electron probes
pyramids
microanalysis
Semiconductor quantum dots
indium
Masks
Multilayers
masks
spatial resolution

Keywords

  • cathodoluminescence
  • spectral mapping
  • iII-nitride structures

Cite this

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title = "Cathodoluminescence spectral mapping of III-nitride structures",
abstract = "The application of cathodoluminescence spectral mapping to the characterisation of a range III-nitride semiconductor structures is described. Details are presented of the instrumentation developed to carry out such measurements using an electron probe micro-analyser. The spatial resolution of the luminescence data is ∼100 nm. The technique is enhanced by the ability to simultaneously perform X-ray microanalysis and electron imaging. Results are presented from epitaxially laterally overgrown GaN and InGaN/GaN structures using both single-layer SiO2 and multilayer SiO2/ZrO2 masks. Effects of strain and microcavity formation are resolved. Application of the technique to InGaN epilayers shows spatially-dependent shifts in the peak wavelength of the luminescence spectrum which correlate directly with microscopic variations in the indium content. Regions emitting at lower energy and with decreased intensity are shown to have higher InN contents, mirroring equivalent macroscopic observations. Finally the spectral mapping technique is used to analyse the luminescence from micron-scale selectively grown III-N pyramids, indicating possible formation of quantum dots at the sharp tips.",
keywords = "cathodoluminescence, spectral mapping , iII-nitride structures",
author = "R.W. Martin and P.R. Edwards and K.P. O'Donnell and M.D. Dawson and C.W. Jeon and C. Liu and G.R. Rice and I.M. Watson",
year = "2004",
month = "3",
doi = "10.1002/pssa.200304089",
language = "English",
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pages = "665--672",
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Cathodoluminescence spectral mapping of III-nitride structures. / Martin, R.W.; Edwards, P.R.; O'Donnell, K.P.; Dawson, M.D.; Jeon, C.W.; Liu, C.; Rice, G.R.; Watson, I.M.

In: Physica Status Solidi A - Applications and Materials Science, Vol. 201, No. 4, 03.2004, p. 665-672.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cathodoluminescence spectral mapping of III-nitride structures

AU - Martin, R.W.

AU - Edwards, P.R.

AU - O'Donnell, K.P.

AU - Dawson, M.D.

AU - Jeon, C.W.

AU - Liu, C.

AU - Rice, G.R.

AU - Watson, I.M.

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N2 - The application of cathodoluminescence spectral mapping to the characterisation of a range III-nitride semiconductor structures is described. Details are presented of the instrumentation developed to carry out such measurements using an electron probe micro-analyser. The spatial resolution of the luminescence data is ∼100 nm. The technique is enhanced by the ability to simultaneously perform X-ray microanalysis and electron imaging. Results are presented from epitaxially laterally overgrown GaN and InGaN/GaN structures using both single-layer SiO2 and multilayer SiO2/ZrO2 masks. Effects of strain and microcavity formation are resolved. Application of the technique to InGaN epilayers shows spatially-dependent shifts in the peak wavelength of the luminescence spectrum which correlate directly with microscopic variations in the indium content. Regions emitting at lower energy and with decreased intensity are shown to have higher InN contents, mirroring equivalent macroscopic observations. Finally the spectral mapping technique is used to analyse the luminescence from micron-scale selectively grown III-N pyramids, indicating possible formation of quantum dots at the sharp tips.

AB - The application of cathodoluminescence spectral mapping to the characterisation of a range III-nitride semiconductor structures is described. Details are presented of the instrumentation developed to carry out such measurements using an electron probe micro-analyser. The spatial resolution of the luminescence data is ∼100 nm. The technique is enhanced by the ability to simultaneously perform X-ray microanalysis and electron imaging. Results are presented from epitaxially laterally overgrown GaN and InGaN/GaN structures using both single-layer SiO2 and multilayer SiO2/ZrO2 masks. Effects of strain and microcavity formation are resolved. Application of the technique to InGaN epilayers shows spatially-dependent shifts in the peak wavelength of the luminescence spectrum which correlate directly with microscopic variations in the indium content. Regions emitting at lower energy and with decreased intensity are shown to have higher InN contents, mirroring equivalent macroscopic observations. Finally the spectral mapping technique is used to analyse the luminescence from micron-scale selectively grown III-N pyramids, indicating possible formation of quantum dots at the sharp tips.

KW - cathodoluminescence

KW - spectral mapping

KW - iII-nitride structures

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