Cathodoluminescence of rare earth implanted AlInN

K. Wang; R.W. Martin; E. Nogales; P.R. Edwards; K.P. O'Donnell; K. Lorenz; E. Alves; I.M. Watson

doi:10.1063/1.2357343

Cathodoluminescence of rare earth implanted AlInN

K. Wang, R.W. Martin, E. Nogales, P.R. Edwards, K.P. O'Donnell, K. Lorenz, E. Alves, I.M. Watson

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Abstract

AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

Original language	English
Article number	131912
Number of pages	3
Journal	Applied Physics Letters
Volume	89
Issue number	13
Early online date	27 Sept 2006
DOIs	https://doi.org/10.1063/1.2357343
Publication status	Published - 2006

Keywords

cathodoluminescence
aluminium compounds
indium compounds
gallium compounds
wide band gap semiconductors
rare earth
AllnN
implanted

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10.1063/1.2357343

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title = "Cathodoluminescence of rare earth implanted AlInN",

abstract = "AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions. ",

keywords = "cathodoluminescence, aluminium compounds, indium compounds, gallium compounds, wide band gap semiconductors, rare earth, AllnN, implanted",

author = "K. Wang and R.W. Martin and E. Nogales and P.R. Edwards and K.P. O'Donnell and K. Lorenz and E. Alves and I.M. Watson",

year = "2006",

doi = "10.1063/1.2357343",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "13",

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TY - JOUR

T1 - Cathodoluminescence of rare earth implanted AlInN

AU - Wang, K.

AU - Martin, R.W.

AU - Nogales, E.

AU - Edwards, P.R.

AU - O'Donnell, K.P.

AU - Lorenz, K.

AU - Alves, E.

AU - Watson, I.M.

PY - 2006

Y1 - 2006

N2 - AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

AB - AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

KW - cathodoluminescence

KW - aluminium compounds

KW - indium compounds

KW - gallium compounds

KW - wide band gap semiconductors

KW - rare earth

KW - AllnN

KW - implanted

U2 - 10.1063/1.2357343

DO - 10.1063/1.2357343

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 131912

ER -

Cathodoluminescence of rare earth implanted AlInN

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Keywords

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