Cathodoluminescence of rare earth implanted AlInN

K. Wang, R.W. Martin, E. Nogales, P.R. Edwards, K.P. O'Donnell, K. Lorenz, E. Alves, I.M. Watson

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.
LanguageEnglish
Article number131912
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number13
Early online date27 Sep 2006
DOIs
Publication statusPublished - 2006

Fingerprint

cathodoluminescence
rare earth elements
annealing
europium
erbium
ions
decomposition
temperature

Keywords

  • cathodoluminescence
  • aluminium compounds
  • indium compounds
  • gallium compounds
  • wide band gap semiconductors
  • rare earth
  • AllnN
  • implanted

Cite this

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title = "Cathodoluminescence of rare earth implanted AlInN",
abstract = "AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.",
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Cathodoluminescence of rare earth implanted AlInN. / Wang, K.; Martin, R.W.; Nogales, E.; Edwards, P.R.; O'Donnell, K.P.; Lorenz, K.; Alves, E.; Watson, I.M.

In: Applied Physics Letters, Vol. 89, No. 13, 131912, 2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Cathodoluminescence of rare earth implanted AlInN

AU - Wang, K.

AU - Martin, R.W.

AU - Nogales, E.

AU - Edwards, P.R.

AU - O'Donnell, K.P.

AU - Lorenz, K.

AU - Alves, E.

AU - Watson, I.M.

PY - 2006

Y1 - 2006

N2 - AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

AB - AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

KW - cathodoluminescence

KW - aluminium compounds

KW - indium compounds

KW - gallium compounds

KW - wide band gap semiconductors

KW - rare earth

KW - AllnN

KW - implanted

U2 - 10.1063/1.2357343

DO - 10.1063/1.2357343

M3 - Article

VL - 89

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

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