Cathodoluminescence of rare earth implanted AlInN

K. Wang, R.W. Martin, E. Nogales, P.R. Edwards, K.P. O'Donnell, K. Lorenz, E. Alves, I.M. Watson

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Abstract

AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.
Original languageEnglish
Article number131912
Number of pages3
JournalApplied Physics Letters
Volume89
Issue number13
Early online date27 Sep 2006
DOIs
Publication statusPublished - 2006

Keywords

  • cathodoluminescence
  • aluminium compounds
  • indium compounds
  • gallium compounds
  • wide band gap semiconductors
  • rare earth
  • AllnN
  • implanted

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