Cathodoluminescence nano-characterization of semiconductors

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

We give an overview of the use of cathodoluminescence (CL) in scanning electron microscopy (SEM) for the nano-scale characterization of semiconducting materials and devices. We discuss the technical aspects of the measurement, such as factors limiting the spatial resolution and design considerations for efficient collection optics. The advantages of more recent developments in the technique are outlined, including the use of the hyperspectral imaging mode and the combination of CL and other SEM-based measurements. We illustrate these points with examples from our own experience of designing and constructing CL systems and applying the technique to the characterization of III-nitride materials and nanostructures.
LanguageEnglish
Article number064005
Number of pages8
JournalSemiconductor Science and Technology
Volume26
Issue number6
Early online date29 Mar 2011
DOIs
Publication statusPublished - 30 Jun 2011

Fingerprint

Cathodoluminescence
cathodoluminescence
Semiconductor materials
Scanning electron microscopy
scanning electron microscopy
Optical resolving power
Nitrides
nitrides
Nanostructures
Optics
spatial resolution
optics

Keywords

  • optics
  • condensed matter
  • electrical matter
  • thin films
  • cathodoluminescence

Cite this

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Cathodoluminescence nano-characterization of semiconductors. / Edwards, Paul R; Martin, Robert W.

In: Semiconductor Science and Technology, Vol. 26, No. 6, 064005, 30.06.2011.

Research output: Contribution to journalArticle

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