Cathodoluminescence from an InGaN/GaN MQW grown on an epitaxially laterally overgrown GaN epilayer

C. Trager-Cowan, I. Osborne, M. Barisonzi, S. K. Manson-Smith, K. P. O'Donnell, K. Jacobs, I. Moerman, P. Demeester

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this paper we report room temperature CL studies of a 5 period InGaN (3 nm)/GaN (7 nm) multiple quantum well (MQW) with a nominal indium concentration of 15%, grown on and off a 4.8 μm epitaxially lateral overgrown GaN (ELOG) epilayer. The ELOG epilayer was overgrown through a SiO2 striped mask with 3 μm window and SiO2 stripe widths oriented in the GaN 〈11̄00〉 direction by metalorganic vapour phase epitaxy (MOVPE). We show that the luminescence efficiency of both the GaN and the MQW is improved for material lying above the stripes of the SiO2 mask compared to that above the windows of the mask or unpatterned material. Monochromatic CL images were acquired from both the GaN and MQW layers with the emission from the MQW layer being much brighter than that from the GaN. Marked differences are observed between corresponding CL images acquired at different electron beam energies.

Original languageEnglish
Pages (from-to)347-350
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - 9 Nov 1999

Keywords

  • cathodoluminescence
  • InGaN
  • epilayers

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