Carrier localization in the vicinity of dislocations in InGaN

F. C-P. Massabuau, P. Chen, M. K. Horton, S. L. Rhode, C. X. Ren, T. J. O'Hanlon, A. Kovács, M. J. Kappers, C. J. Humphreys, R. E. Dunin-Borkowski, R. A. Oliver

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.
LanguageEnglish
JournalJournal of Applied Physics
Volume121
Issue number013104
DOIs
Publication statusPublished - 3 Jan 2017

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resilience
strain distribution
materials science
cathodoluminescence
condensates
microscopes
atomic force microscopy
engineering
methodology
microscopy
optical properties
transmission electron microscopy
scanning electron microscopy
defects
spectroscopy

Keywords

  • materials science
  • atomic force microscopy
  • chemical elements
  • luminescence
  • Monte Carlo methods
  • semiconductors

Cite this

Massabuau, F. C-P., Chen, P., Horton, M. K., Rhode, S. L., Ren, C. X., O'Hanlon, T. J., ... Oliver, R. A. (2017). Carrier localization in the vicinity of dislocations in InGaN. Journal of Applied Physics, 121(013104). https://doi.org/10.1063/1.4973278
Massabuau, F. C-P. ; Chen, P. ; Horton, M. K. ; Rhode, S. L. ; Ren, C. X. ; O'Hanlon, T. J. ; Kovács, A. ; Kappers, M. J. ; Humphreys, C. J. ; Dunin-Borkowski, R. E. ; Oliver, R. A. / Carrier localization in the vicinity of dislocations in InGaN. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 013104.
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abstract = "We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.",
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Massabuau, FC-P, Chen, P, Horton, MK, Rhode, SL, Ren, CX, O'Hanlon, TJ, Kovács, A, Kappers, MJ, Humphreys, CJ, Dunin-Borkowski, RE & Oliver, RA 2017, 'Carrier localization in the vicinity of dislocations in InGaN' Journal of Applied Physics, vol. 121, no. 013104. https://doi.org/10.1063/1.4973278

Carrier localization in the vicinity of dislocations in InGaN. / Massabuau, F. C-P.; Chen, P.; Horton, M. K.; Rhode, S. L.; Ren, C. X.; O'Hanlon, T. J.; Kovács, A.; Kappers, M. J.; Humphreys, C. J.; Dunin-Borkowski, R. E.; Oliver, R. A.

In: Journal of Applied Physics, Vol. 121, No. 013104, 03.01.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carrier localization in the vicinity of dislocations in InGaN

AU - Massabuau, F. C-P.

AU - Chen, P.

AU - Horton, M. K.

AU - Rhode, S. L.

AU - Ren, C. X.

AU - O'Hanlon, T. J.

AU - Kovács, A.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Dunin-Borkowski, R. E.

AU - Oliver, R. A.

N1 - This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Massabuau, F, Chen, P, Horton, MK, Rhode, SL, Ren, CX, O'Hanlon, TJ, Kovacs, A, Kappers, MJ, Humphreys, CJ, Dunin-Borkowski, RE & Oliver, RA 2017, 'Carrier localization in the vicinity of dislocations in InGaN' Journal of Applied Physics, vol. 121, no. 013104 and may be found at https://doi.org/10.1063/1.4973278.

PY - 2017/1/3

Y1 - 2017/1/3

N2 - We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.

AB - We present a multi-microscopy study of dislocations in InGaN, whereby the same threading dislocation was observed under several microscopes (atomic force microscopy, scanning electron microscopy, cathodoluminescence imaging and spectroscopy, transmission electron microscopy), and its morphological optical and structural properties directly correlated. We achieved this across an ensemble of defects large enough to be statistically significant. Our results provide evidence that carrier localization occurs in the direct vicinity of the dislocation through the enhanced formation of In-N chains and atomic condensates, thus limiting non-radiative recombination of carriers at the dislocation core. We highlight that the localization properties in the vicinity of threading dislocations arise as a consequence of the strain field of the individual dislocation and the additional strain field building between interacting neighboring dislocations. Our study therefore suggests that careful strain and dislocation distribution engineering may further improve the resilience of InGaN-based devices to threading dislocations. Besides providing a new understanding of dislocations in InGaN, this paper presents a proof-of-concept for a methodology which is relevant to many problems in materials science.

KW - materials science

KW - atomic force microscopy

KW - chemical elements

KW - luminescence

KW - Monte Carlo methods

KW - semiconductors

U2 - 10.1063/1.4973278

DO - 10.1063/1.4973278

M3 - Article

VL - 121

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 013104

ER -