Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

Meg Mahat, Antonio Llopis, Richard Schaller, Ian Watson, Sergio Manuel De Sousa Pereira, Arup Neogi

Research output: Contribution to journal › Article

Abstract

Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.
LanguageEnglish
Pages55-60
Number of pages6
JournalMRS Communications
Volume2
Issue number2
DOIs
Publication statusPublished - 15 Jun 2012

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nonlinearity
quantum wells
screening
absorption spectra
bleaching
quenching
shift
spectroscopy

Keywords

  • quantum wells (QWs)
  • quantum-confined stark effect (QCSE)

Cite this

Mahat, M., Llopis, A., Schaller, R., Watson, I., Pereira, S. M. D. S., & Neogi, A. (2012). Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications, 2(2), 55-60. https://doi.org/10.1557/mrc.2012.8
Mahat, Meg ; Llopis, Antonio ; Schaller, Richard ; Watson, Ian ; Pereira, Sergio Manuel De Sousa ; Neogi, Arup. / Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. In: MRS Communications. 2012 ; Vol. 2, No. 2. pp. 55-60.
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Mahat, M, Llopis, A, Schaller, R, Watson, I, Pereira, SMDS & Neogi, A 2012, 'Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits' MRS Communications, vol. 2, no. 2, pp. 55-60. https://doi.org/10.1557/mrc.2012.8

Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. / Mahat, Meg; Llopis, Antonio; Schaller, Richard; Watson, Ian; Pereira, Sergio Manuel De Sousa; Neogi, Arup.

In: MRS Communications, Vol. 2, No. 2, 15.06.2012, p. 55-60.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

AU - Mahat, Meg

AU - Llopis, Antonio

AU - Schaller, Richard

AU - Watson, Ian

AU - Pereira, Sergio Manuel De Sousa

AU - Neogi, Arup

PY - 2012/6/15

Y1 - 2012/6/15

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AB - Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.

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KW - quantum-confined stark effect (QCSE)

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DO - 10.1557/mrc.2012.8

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Mahat M, Llopis A, Schaller R, Watson I, Pereira SMDS, Neogi A. Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits. MRS Communications. 2012 Jun 15;2(2):55-60. https://doi.org/10.1557/mrc.2012.8

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