Carrier-induced nonlinearities in InGaN/GaN quantum wells with V-pits

Meg Mahat, Antonio Llopis, Richard Schaller, Ian Watson, Sergio Manuel De Sousa Pereira, Arup Neogi

Research output: Contribution to journalArticle

Abstract

Ultrafast differential transmission spectroscopy was employed to study the carrier dynamics in InGaN/GaN multiple quantum wells with high inverted hexagonal pits density due to threading dislocation. By monitoring the temporal evolution of the excitonic absorption spectrum, a reduction of the quantum-confinement Stark shift was observed due to the photo-induced in-well field screening at low carrier densities and excitonic absorption quenching at high carrier densities. By comparing the differential absorption spectra at various injected carrier densities, the in-well field screening effect was distinguished from excitonic bleaching.
Original languageEnglish
Pages (from-to)55-60
Number of pages6
JournalMRS Communications
Volume2
Issue number2
DOIs
Publication statusPublished - 15 Jun 2012

Keywords

  • quantum wells (QWs)
  • quantum-confined stark effect (QCSE)

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