Carbon nanotube growth activated by quantum-confined silicon nanocrystals

D. Mariotti*, V. Švrček, A. Mathur, C. Dickinson, K. Matsubara, M. Kondo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

Original languageEnglish
Article number122001
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume46
Issue number12
Early online date18 Feb 2013
DOIs
Publication statusPublished - 27 Mar 2013

Keywords

  • carbon nanotubes
  • electrochemical etching
  • plasma applications

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