Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2

Q. Q. Jiao, Z. Z. Chen, J. Ma, S. Y. Wang, Y. Li, S. Jiang, Y. L. Feng, J. Z. Li, Y. F. Chen, T. J. Yu, S. F. Wang, G. Y. Zhang, P. F. Tian, E. Y. Xie, Z. Gong, E. D. Gu, M. D. Dawson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

LanguageEnglish
Pages16565-16574
Number of pages10
JournalOptics Express
Volume23
Issue number13
DOIs
Publication statusPublished - 29 Jun 2015

Fingerprint

light emitting diodes
injection
streak cameras
energy bands
density distribution
conduction bands
quantum wells
current density
computer programs
photoluminescence

Keywords

  • InGaN/GaN
  • micro-LEDs
  • time resolved photoluminescence

Cite this

Jiao, Q. Q. ; Chen, Z. Z. ; Ma, J. ; Wang, S. Y. ; Li, Y. ; Jiang, S. ; Feng, Y. L. ; Li, J. Z. ; Chen, Y. F. ; Yu, T. J. ; Wang, S. F. ; Zhang, G. Y. ; Tian, P. F. ; Xie, E. Y. ; Gong, Z. ; Gu, E. D. ; Dawson, M. D. / Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. In: Optics Express. 2015 ; Vol. 23, No. 13. pp. 16565-16574.
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abstract = "Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.",
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Jiao, QQ, Chen, ZZ, Ma, J, Wang, SY, Li, Y, Jiang, S, Feng, YL, Li, JZ, Chen, YF, Yu, TJ, Wang, SF, Zhang, GY, Tian, PF, Xie, EY, Gong, Z, Gu, ED & Dawson, MD 2015, 'Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2' Optics Express, vol. 23, no. 13, pp. 16565-16574. https://doi.org/10.1364/OE.23.016565

Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. / Jiao, Q. Q.; Chen, Z. Z.; Ma, J.; Wang, S. Y.; Li, Y.; Jiang, S.; Feng, Y. L.; Li, J. Z.; Chen, Y. F.; Yu, T. J.; Wang, S. F.; Zhang, G. Y.; Tian, P. F.; Xie, E. Y.; Gong, Z.; Gu, E. D.; Dawson, M. D.

In: Optics Express, Vol. 23, No. 13, 29.06.2015, p. 16565-16574.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2

AU - Jiao, Q. Q.

AU - Chen, Z. Z.

AU - Ma, J.

AU - Wang, S. Y.

AU - Li, Y.

AU - Jiang, S.

AU - Feng, Y. L.

AU - Li, J. Z.

AU - Chen, Y. F.

AU - Yu, T. J.

AU - Wang, S. F.

AU - Zhang, G. Y.

AU - Tian, P. F.

AU - Xie, E. Y.

AU - Gong, Z.

AU - Gu, E. D.

AU - Dawson, M. D.

N1 - © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

PY - 2015/6/29

Y1 - 2015/6/29

N2 - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

AB - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

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