Abstract
Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 16565-16574 |
| Number of pages | 10 |
| Journal | Optics Express |
| Volume | 23 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 29 Jun 2015 |
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Keywords
- InGaN/GaN
- micro-LEDs
- time resolved photoluminescence
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Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. / Jiao, Q. Q.; Chen, Z. Z.; Ma, J.; Wang, S. Y.; Li, Y.; Jiang, S.; Feng, Y. L.; Li, J. Z.; Chen, Y. F.; Yu, T. J.; Wang, S. F.; Zhang, G. Y.; Tian, P. F.; Xie, E. Y.; Gong, Z.; Gu, E. D.; Dawson, M. D.
In: Optics Express, Vol. 23, No. 13, 29.06.2015, p. 16565-16574.Research output: Contribution to journal › Article
TY - JOUR
T1 - Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2
AU - Jiao, Q. Q.
AU - Chen, Z. Z.
AU - Ma, J.
AU - Wang, S. Y.
AU - Li, Y.
AU - Jiang, S.
AU - Feng, Y. L.
AU - Li, J. Z.
AU - Chen, Y. F.
AU - Yu, T. J.
AU - Wang, S. F.
AU - Zhang, G. Y.
AU - Tian, P. F.
AU - Xie, E. Y.
AU - Gong, Z.
AU - Gu, E. D.
AU - Dawson, M. D.
N1 - © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.
PY - 2015/6/29
Y1 - 2015/6/29
N2 - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.
AB - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.
KW - InGaN/GaN
KW - micro-LEDs
KW - time resolved photoluminescence
UR - http://www.scopus.com/inward/record.url?scp=84941358644&partnerID=8YFLogxK
U2 - 10.1364/OE.23.016565
DO - 10.1364/OE.23.016565
M3 - Article
AN - SCOPUS:84941358644
VL - 23
SP - 16565
EP - 16574
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 13
ER -