Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2

Q. Q. Jiao; Z. Z. Chen; J. Ma; S. Y. Wang; Y. Li; S. Jiang; Y. L. Feng; J. Z. Li; Y. F. Chen; T. J. Yu; S. F. Wang; G. Y. Zhang; P. F. Tian; E. Y. Xie; Z. Gong; E. D. Gu; M. D. Dawson

doi:10.1364/OE.23.016565

Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2

Q. Q. Jiao, Z. Z. Chen, J. Ma, S. Y. Wang, Y. Li, S. Jiang, Y. L. Feng, J. Z. Li, Y. F. Chen, T. J. Yu, S. F. Wang, G. Y. Zhang, P. F. Tian, E. Y. Xie, Z. Gong, E. D. Gu, M. D. Dawson

Research output: Contribution to journal › Article

2 Citations (Scopus)

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Abstract

Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

Original language	English
Pages (from-to)	16565-16574
Number of pages	10
Journal	Optics Express
Volume	23
Issue number	13
DOIs	https://doi.org/10.1364/OE.23.016565
Publication status	Published - 29 Jun 2015

Keywords

InGaN/GaN
micro-LEDs
time resolved photoluminescence

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10.1364/OE.23.016565

Jiao-etal-OE-2015-Capability-of-GaN-based-micro-light-emitting-diodes-operated-at-an-injectionAccepted author manuscript, 1.07 MB

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Jiao, Q. Q., Chen, Z. Z., Ma, J., Wang, S. Y., Li, Y., Jiang, S., Feng, Y. L., Li, J. Z., Chen, Y. F., Yu, T. J., Wang, S. F., Zhang, G. Y., Tian, P. F., Xie, E. Y., Gong, Z., Gu, E. D., & Dawson, M. D. (2015). Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. Optics Express, 23(13), 16565-16574. https://doi.org/10.1364/OE.23.016565

Jiao, Q. Q. ; Chen, Z. Z. ; Ma, J. ; Wang, S. Y. ; Li, Y. ; Jiang, S. ; Feng, Y. L. ; Li, J. Z. ; Chen, Y. F. ; Yu, T. J. ; Wang, S. F. ; Zhang, G. Y. ; Tian, P. F. ; Xie, E. Y. ; Gong, Z. ; Gu, E. D. ; Dawson, M. D. / Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. In: Optics Express. 2015 ; Vol. 23, No. 13. pp. 16565-16574.

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title = "Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2",

abstract = "Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.",

keywords = "InGaN/GaN, micro-LEDs, time resolved photoluminescence",

author = "Jiao, {Q. Q.} and Chen, {Z. Z.} and J. Ma and Wang, {S. Y.} and Y. Li and S. Jiang and Feng, {Y. L.} and Li, {J. Z.} and Chen, {Y. F.} and Yu, {T. J.} and Wang, {S. F.} and Zhang, {G. Y.} and Tian, {P. F.} and Xie, {E. Y.} and Z. Gong and Gu, {E. D.} and Dawson, {M. D.}",

note = " {\textcopyright} 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.",

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doi = "10.1364/OE.23.016565",

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Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2. / Jiao, Q. Q.; Chen, Z. Z.; Ma, J.; Wang, S. Y.; Li, Y.; Jiang, S.; Feng, Y. L.; Li, J. Z.; Chen, Y. F.; Yu, T. J.; Wang, S. F.; Zhang, G. Y.; Tian, P. F.; Xie, E. Y.; Gong, Z.; Gu, E. D.; Dawson, M. D.

In: Optics Express, Vol. 23, No. 13, 29.06.2015, p. 16565-16574.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2

AU - Jiao, Q. Q.

AU - Chen, Z. Z.

AU - Ma, J.

AU - Wang, S. Y.

AU - Li, Y.

AU - Jiang, S.

AU - Feng, Y. L.

AU - Li, J. Z.

AU - Chen, Y. F.

AU - Yu, T. J.

AU - Wang, S. F.

AU - Zhang, G. Y.

AU - Tian, P. F.

AU - Xie, E. Y.

AU - Gong, Z.

AU - Gu, E. D.

AU - Dawson, M. D.

N1 - © 2015 Optical Society of America. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modifications of the content of this paper are prohibited.

PY - 2015/6/29

Y1 - 2015/6/29

N2 - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

AB - Different size InGaN/GaN based micro-LEDs (μLEDs) are fabricated. An extremely high injection level above 16 kA/cm2 is achieved for 10 μm-diameter LED. The lateral current density and carrier distributions of the μLEDs are simulated by APSYS software. Streak camera time resolved photoluminescence (TRPL) results show clear evidence that the band-gap renormalization (BGR) effect is weakened by strain relaxation in smaller size μLEDs. BGR affects the relaxation of free carriers on the conduction band bottom in multiple quantum wells (MQWs), and then indirectly affects the recombination rate of carriers. An energy band model based on BGR effect is made to explain the high-injection-level phenomenon for μLEDs.

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