Calculation of optical transition energies for self-formed InGaN quantum dots

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The energy levels determining optical transitions within indium-rich InGaN quantum dots are estimated by calculating ground state energy levels in the regime of strong 3D confinement. Effects due to finite barrier heights and variation in band offset ratios are included and the consequences of the strong piezoelectric fields within the dots considered. It is shown that the lowest optical transitions in spherical quantum dots with radii up to 10 nm correspond to wavelengths covering the visible spectrum. These results are discussed in relation to the significant recent advances in light emitters based on InGaN layers.

LanguageEnglish
Pages441-444
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume216
Issue number1
DOIs
Publication statusPublished - 1 Nov 1999

Fingerprint

Optical transitions
optical transition
Electron energy levels
Semiconductor quantum dots
energy levels
quantum dots
Indium
visible spectrum
Ground state
indium
emitters
coverings
Wavelength
radii
ground state
energy
wavelengths

Keywords

  • quantum dots
  • InGaN
  • light emitting diode

Cite this

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Calculation of optical transition energies for self-formed InGaN quantum dots. / Martin, R. W.; O'Donnell, K. P.

In: Physica Status Solidi (B) Basic Research, Vol. 216, No. 1, 01.11.1999, p. 441-444.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Calculation of optical transition energies for self-formed InGaN quantum dots

AU - Martin, R. W.

AU - O'Donnell, K. P.

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AB - The energy levels determining optical transitions within indium-rich InGaN quantum dots are estimated by calculating ground state energy levels in the regime of strong 3D confinement. Effects due to finite barrier heights and variation in band offset ratios are included and the consequences of the strong piezoelectric fields within the dots considered. It is shown that the lowest optical transitions in spherical quantum dots with radii up to 10 nm correspond to wavelengths covering the visible spectrum. These results are discussed in relation to the significant recent advances in light emitters based on InGaN layers.

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KW - InGaN

KW - light emitting diode

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