C-band emission from GaInNAsSbVCSEL on GaAS

N. Laurand, S. Calvez, H.D. Sun, M.D. Dawson, J.A. Gupta, G.C. Aers

Research output: Contribution to journalArticle

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Abstract

The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.
LanguageEnglish
Pages29-30
Number of pages1
JournalElectronics Letters
Volume42
Issue number1
DOIs
Publication statusPublished - 2006

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Mirrors
Surface emitting lasers
Molecular beam epitaxy
Annealing
Wavelength
Temperature
Lasers

Keywords

  • optics
  • photonics
  • lasers

Cite this

Laurand, N. ; Calvez, S. ; Sun, H.D. ; Dawson, M.D. ; Gupta, J.A. ; Aers, G.C. / C-band emission from GaInNAsSbVCSEL on GaAS. In: Electronics Letters. 2006 ; Vol. 42, No. 1. pp. 29-30.
@article{752aa43a87b24a4584be951bb380cef9,
title = "C-band emission from GaInNAsSbVCSEL on GaAS",
abstract = "The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.",
keywords = "optics, photonics, lasers",
author = "N. Laurand and S. Calvez and H.D. Sun and M.D. Dawson and J.A. Gupta and G.C. Aers",
year = "2006",
doi = "10.1049/el:2006398",
language = "English",
volume = "42",
pages = "29--30",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "1",

}

Laurand, N, Calvez, S, Sun, HD, Dawson, MD, Gupta, JA & Aers, GC 2006, 'C-band emission from GaInNAsSbVCSEL on GaAS' Electronics Letters, vol. 42, no. 1, pp. 29-30. https://doi.org/10.1049/el:2006398

C-band emission from GaInNAsSbVCSEL on GaAS. / Laurand, N.; Calvez, S.; Sun, H.D.; Dawson, M.D.; Gupta, J.A.; Aers, G.C.

In: Electronics Letters, Vol. 42, No. 1, 2006, p. 29-30.

Research output: Contribution to journalArticle

TY - JOUR

T1 - C-band emission from GaInNAsSbVCSEL on GaAS

AU - Laurand, N.

AU - Calvez, S.

AU - Sun, H.D.

AU - Dawson, M.D.

AU - Gupta, J.A.

AU - Aers, G.C.

PY - 2006

Y1 - 2006

N2 - The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

AB - The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

KW - optics

KW - photonics

KW - lasers

UR - http://dx.doi.org/10.1049/el:2006398

U2 - 10.1049/el:2006398

DO - 10.1049/el:2006398

M3 - Article

VL - 42

SP - 29

EP - 30

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 1

ER -