Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities

R.W. Martin, P.R. Edwards, R. Pecharroman-Gallego, C. Trager-Cowan, T. Kim, H.S. Kim, K.S. Kim, I.M. Watson, M.D. Dawson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.
LanguageEnglish
Pages145-149
Number of pages4
JournalPhysica Status Solidi A
Volume183
Issue number1
DOIs
Publication statusPublished - Jan 2001

Fingerprint

Microcavities
Multilayers
mirrors
reflectance
Cathodoluminescence
cathodoluminescence
Nitrides
Semiconductor quantum wells
nitrides
Masks
Photoluminescence
Mirrors
masks
quantum wells
photoluminescence
Imaging techniques
Wavelength
wavelengths
energy

Keywords

  • surface emitting laser
  • buried dielectric mirrors
  • GaN-based microcavities

Cite this

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title = "Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities",
abstract = "The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99{\%} at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.",
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Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities. / Martin, R.W.; Edwards, P.R.; Pecharroman-Gallego, R.; Trager-Cowan, C.; Kim, T.; Kim, H.S.; Kim, K.S.; Watson, I.M.; Dawson, M.D.

In: Physica Status Solidi A, Vol. 183, No. 1, 01.2001, p. 145-149.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Buried dielectric mirrors for the lateral overgrowth of GaN-based microcavities

AU - Martin, R.W.

AU - Edwards, P.R.

AU - Pecharroman-Gallego, R.

AU - Trager-Cowan, C.

AU - Kim, T.

AU - Kim, H.S.

AU - Kim, K.S.

AU - Watson, I.M.

AU - Dawson, M.D.

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2001/1

Y1 - 2001/1

N2 - The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

AB - The use of lateral overgrowth techniques to develop III-nitride microcavities with both mirrors fabricated from very highly reflecting dielectric multilayers (e.g. SiO2/ZrO2) will be discussed. Multilayer mirror stacks with broad high reflectivity stop-bands and peak reflectivities in excess of 99% at wavelengths near the emission energies of typical InGaN/GaN quantum well structures, have been patterned in order to be compatible with subsequent lateral epitaxial overgrowth or pendeoepitaxy. Improvements in material quality resulting from lateral overgrowth above single layer masks are demonstrated using spatially resolved photoluminescence and cathodoluminescence imaging.

KW - surface emitting laser

KW - buried dielectric mirrors

KW - GaN-based microcavities

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M3 - Article

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JO - Physica Status Solidi A

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