Brownian noise in FET based nano-pore sensing: a 3D simulation study

I. Moore; C. Millar; S. Roy; A. Asenov

doi:10.1109/IWCE.2010.5677932

Brownian noise in FET based nano-pore sensing: a 3D simulation study

I. Moore^*, C. Millar, S. Roy, A. Asenov

^*Corresponding author for this work

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Research output: Chapter in Book/Report/Conference proceeding › Conference contribution book

Abstract

We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work [1] by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions.

Original language	English
Title of host publication	2010 14th International Workshop on Computational Electronics, IWCE 2010
Publisher	IEEE
Pages	27-30
Number of pages	4
ISBN (Print)	9781424493845
DOIs	https://doi.org/10.1109/IWCE.2010.5677932
Publication status	Published - 1 Dec 2010
Event	2010 14th International Workshop on Computational Electronics, IWCE 2010 - Pisa, Italy Duration: 26 Oct 2010 → 29 Oct 2010

Conference

Conference	2010 14th International Workshop on Computational Electronics, IWCE 2010
Country/Territory	Italy
City	Pisa
Period	26/10/10 → 29/10/10

Keywords

mathematical model
biological system modeling
ions
solid modeling
MOSFETs
equations
biosensors
brownian motion
computerised instrumentation
field effect transistors

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10.1109/IWCE.2010.5677932

Cite this

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title = "Brownian noise in FET based nano-pore sensing: a 3D simulation study",

abstract = "We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work [1] by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions.",

keywords = "mathematical model, biological system modeling, ions, solid modeling, MOSFETs, equations, biosensors, brownian motion, computerised instrumentation, field effect transistors",

author = "I. Moore and C. Millar and S. Roy and A. Asenov",

year = "2010",

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doi = "10.1109/IWCE.2010.5677932",

language = "English",

isbn = "9781424493845",

pages = "27--30",

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T2 - 2010 14th International Workshop on Computational Electronics, IWCE 2010

AU - Moore, I.

AU - Millar, C.

AU - Roy, S.

AU - Asenov, A.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work [1] by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions.

AB - We report the development and testing of simulation software, which, combining self-consistent Brownian dynamics and Drift Diffusion simulation techniques in a single simulation domain allows the simulation of the effect of ions and charged molecules on the current flowing through a sensing FET. For sensory applications an aqueous solution is introduced above the transistor gate dielectric and the effect of fixed charges on the transistor current is investigated. We significantly extend previous work [1] by analysing the effects of mobile ions on the system and introduce an initial analysis of the noise associated with the Brownian motion of mobile ions in the solution in order to determine the sensitivity of the FET in measuring the position and number of ions.

KW - mathematical model

KW - biological system modeling

KW - ions

KW - solid modeling

KW - MOSFETs

KW - equations

KW - biosensors

KW - brownian motion

KW - computerised instrumentation

KW - field effect transistors

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DO - 10.1109/IWCE.2010.5677932

M3 - Conference contribution book

AN - SCOPUS:78751698228

SN - 9781424493845

SP - 27

EP - 30

BT - 2010 14th International Workshop on Computational Electronics, IWCE 2010

PB - IEEE

Y2 - 26 October 2010 through 29 October 2010

ER -

Brownian noise in FET based nano-pore sensing: a 3D simulation study

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