Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures

A. Redondo-Cubero, K. Lorenz, R. Gago, N. Franco, S. Fernandez-Garrido, P.J.M. Smulders, E. Munoz, I.M. Watson, EU-FP6 (Funder), FCT, Portugal (Funder), MICINN, Spain (Funder)

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.
LanguageEnglish
Article number051921
Number of pages3
JournalApplied Physics Letters
Volume95
Issue number5
DOIs
Publication statusPublished - 3 Aug 2009

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Keywords

  • channelling
  • gallium compounds
  • III-V semiconductors
  • internal stresses
  • ion beam effects
  • multilayers
  • wide band gap semiconductors

Cite this

Redondo-Cubero, A., Lorenz, K., Gago, R., Franco, N., Fernandez-Garrido, S., Smulders, P. J. M., ... MICINN, Spain (Funder) (2009). Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. Applied Physics Letters, 95(5), [051921 ]. https://doi.org/10.1063/1.3202421
Redondo-Cubero, A. ; Lorenz, K. ; Gago, R. ; Franco, N. ; Fernandez-Garrido, S. ; Smulders, P.J.M. ; Munoz, E. ; Watson, I.M. ; EU-FP6 (Funder) ; FCT, Portugal (Funder) ; MICINN, Spain (Funder). / Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. In: Applied Physics Letters. 2009 ; Vol. 95, No. 5.
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title = "Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures",
abstract = "The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.",
keywords = "channelling, gallium compounds, III-V semiconductors, internal stresses, ion beam effects, multilayers, wide band gap semiconductors",
author = "A. Redondo-Cubero and K. Lorenz and R. Gago and N. Franco and S. Fernandez-Garrido and P.J.M. Smulders and E. Munoz and I.M. Watson and {EU-FP6 (Funder)} and {FCT, Portugal (Funder)} and {MICINN, Spain (Funder)}",
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month = "8",
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Redondo-Cubero, A, Lorenz, K, Gago, R, Franco, N, Fernandez-Garrido, S, Smulders, PJM, Munoz, E, Watson, IM, EU-FP6 (Funder), FCT, Portugal (Funder) & MICINN, Spain (Funder) 2009, 'Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures' Applied Physics Letters, vol. 95, no. 5, 051921 . https://doi.org/10.1063/1.3202421

Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. / Redondo-Cubero, A.; Lorenz, K.; Gago, R.; Franco, N.; Fernandez-Garrido, S.; Smulders, P.J.M.; Munoz, E.; Watson, I.M.; EU-FP6 (Funder); FCT, Portugal (Funder); MICINN, Spain (Funder).

In: Applied Physics Letters, Vol. 95, No. 5, 051921 , 03.08.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures

AU - Redondo-Cubero, A.

AU - Lorenz, K.

AU - Gago, R.

AU - Franco, N.

AU - Fernandez-Garrido, S.

AU - Smulders, P.J.M.

AU - Munoz, E.

AU - Watson, I.M.

AU - EU-FP6 (Funder)

AU - FCT, Portugal (Funder)

AU - MICINN, Spain (Funder)

N1 - Strathprints' policy is to record up to 8 authors per publication, plus any additional authors based at the University of Strathclyde. More authors may be listed on the official publication than appear in the Strathprints' record.

PY - 2009/8/3

Y1 - 2009/8/3

N2 - The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.

AB - The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.

KW - channelling

KW - gallium compounds

KW - III-V semiconductors

KW - internal stresses

KW - ion beam effects

KW - multilayers

KW - wide band gap semiconductors

U2 - 10.1063/1.3202421

DO - 10.1063/1.3202421

M3 - Article

VL - 95

JO - Applied Physics Letters

T2 - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

M1 - 051921

ER -

Redondo-Cubero A, Lorenz K, Gago R, Franco N, Fernandez-Garrido S, Smulders PJM et al. Breakdown of anomalous channeling with ion energy for accurate strain determination in gan-based heterostructures. Applied Physics Letters. 2009 Aug 3;95(5). 051921 . https://doi.org/10.1063/1.3202421