Abstract
Language | English |
---|---|
Patent number | To be ascertained |
Publication status | Published - 2004 |
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Keywords
- semiconductor
- gallium nitride
- light emitting diode
Cite this
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Blue laser fabrication layer. / Watson, I.M. (Inventor); Dawson, M.D. (Inventor); Watson, Ian M. and Dawson, Martin D. (Patent applicant) (Inventor).
Patent No.: To be ascertained.Research output: Patent
TY - PAT
T1 - Blue laser fabrication layer
AU - Watson, I.M.
AU - Dawson, M.D.
AU - Watson, Ian M. and Dawson, Martin D. (Patent applicant)
N1 - AHR
PY - 2004
Y1 - 2004
N2 - Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.
AB - Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.
KW - semiconductor
KW - gallium nitride
KW - light emitting diode
UR - http://www.strath.ac.uk/ri/bds/techfly/bluelaserfabricationlayer/
M3 - Patent
M1 - To be ascertained
ER -