Blue laser fabrication layer

I.M. Watson; M.D. Dawson; Watson, Ian M. and Dawson, Martin D. (Patent applicant)

Blue laser fabrication layer

I.M. Watson (Inventor), M.D. Dawson (Inventor), Watson, Ian M. and Dawson, Martin D. (Patent applicant) (Inventor)

Research output: Patent

Abstract

Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.

Original language	English
Patent number	To be ascertained
Publication status	Published - 2004

Keywords

semiconductor
gallium nitride
light emitting diode

Access to Document

http://www.strath.ac.uk/ri/bds/techfly/bluelaserfabricationlayer/

Cite this

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title = "Blue laser fabrication layer",

abstract = "Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.",

keywords = "semiconductor, gallium nitride, light emitting diode",

author = "I.M. Watson and M.D. Dawson and {Watson, Ian M. and Dawson, Martin D. (Patent applicant)}",

note = "AHR; To be ascertained",

year = "2004",

language = "English",

type = "Patent",

}

TY - PAT

T1 - Blue laser fabrication layer

AU - Watson, I.M.

AU - Dawson, M.D.

AU - Watson, Ian M. and Dawson, Martin D. (Patent applicant)

N1 - AHR

PY - 2004

Y1 - 2004

N2 - Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.

AB - Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.

KW - semiconductor

KW - gallium nitride

KW - light emitting diode

UR - http://www.strath.ac.uk/ri/bds/techfly/bluelaserfabricationlayer/

M3 - Patent

M1 - To be ascertained

ER -