Blue cathodoluminescence from thulium implanted AlxGa1−xN and InxAl1−xN

I. S. Roqan, K. Lorenz, K. P. O'Donnell, C. Trager-Cowan, R. W. Martin, I. M. Watson, E. Alves

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

Room temperature cathodoluminescence (RTCL) was obtained from Tm implanted AlxGa1-xN with different AlN contents (in the range 0 <= x <= 0.2) and from implanted InxAl1-xN with different InN contents (x = 0.13 and 0.19) close to the lattice match with GaN. The Tm3+ emission spectrum depends critically on the host material. The blue emission from AIxGal-xN:Tm peaks in intensity for an AlN content of x similar to 0.11. The emission is enhanced by up to a factor of 50 times with an increase of annealing temperature from 1000 to 1300 degrees C. The blue emission from In0.13Al0.87N:Tm, annealed at 1200 degrees C, is more than ten times stronger than that from AlxGa1-xN:Tm, x <= 0.2. However, the intensity decreases significantly as the InN fraction increases from 0.13 to 0.19.

Original languageEnglish
Pages (from-to)445-451
Number of pages7
JournalSuperlattices and Microstructures
Volume40
Issue number4-6
DOIs
Publication statusPublished - Dec 2006

Keywords

  • rare earth
  • GaAlN
  • InAlN
  • implantation
  • cathodoluminescence

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