Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy

C. Griffin, E. Gu, H.W. Choi, C.W. Jeon, J.M. Girkin, M.D. Dawson, G. McConnell

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

The recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to microdisplays has created an urgent need for controlled manipulation of the light output from these devices. With directed light output these devices can be used in situations where collimated beams or light focused onto several thousand matrix points is desired. In order to do this effectively, the emission characteristics of the devices must be fully understood and characterized. Here we utilize confocal microscopy to directly determine the emission characteristics and angular beam divergences from the individual micro-LED elements. The technique is applied to both top (into air) and bottom (through substrate) emission in arrays of green (540 nm), blue (470 nm), and UV (370 nm) micro-LED devices, at distances of up to 50 µm from the emission plane. The results are consistent with simple optical modeling of the expected beam profiles.
LanguageEnglish
JournalApplied Physics Letters
Volume86
Issue number4
DOIs
Publication statusPublished - 24 Jan 2005

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divergence
light emitting diodes
microscopy
micrometers
output
manipulators
air
matrices
profiles

Keywords

  • collimated beams
  • InGaN/GaN light-emitting diodes
  • confocal microscopy
  • photonics
  • optics

Cite this

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title = "Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy",
abstract = "The recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to microdisplays has created an urgent need for controlled manipulation of the light output from these devices. With directed light output these devices can be used in situations where collimated beams or light focused onto several thousand matrix points is desired. In order to do this effectively, the emission characteristics of the devices must be fully understood and characterized. Here we utilize confocal microscopy to directly determine the emission characteristics and angular beam divergences from the individual micro-LED elements. The technique is applied to both top (into air) and bottom (through substrate) emission in arrays of green (540 nm), blue (470 nm), and UV (370 nm) micro-LED devices, at distances of up to 50 µm from the emission plane. The results are consistent with simple optical modeling of the expected beam profiles.",
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Beam divergence measurements of InGaN/GaN micro-array light-emitting diodes using confocal microscopy. / Griffin, C.; Gu, E.; Choi, H.W.; Jeon, C.W.; Girkin, J.M.; Dawson, M.D.; McConnell, G.

In: Applied Physics Letters, Vol. 86, No. 4, 24.01.2005.

Research output: Contribution to journalArticle

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AU - Griffin, C.

AU - Gu, E.

AU - Choi, H.W.

AU - Jeon, C.W.

AU - Girkin, J.M.

AU - Dawson, M.D.

AU - McConnell, G.

PY - 2005/1/24

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AB - The recent development of high-density, two-dimensional arrays of micrometer-sized InGaN/GaN light-emitting diodes (micro-LEDs) with potential applications from scientific instrumentation to microdisplays has created an urgent need for controlled manipulation of the light output from these devices. With directed light output these devices can be used in situations where collimated beams or light focused onto several thousand matrix points is desired. In order to do this effectively, the emission characteristics of the devices must be fully understood and characterized. Here we utilize confocal microscopy to directly determine the emission characteristics and angular beam divergences from the individual micro-LED elements. The technique is applied to both top (into air) and bottom (through substrate) emission in arrays of green (540 nm), blue (470 nm), and UV (370 nm) micro-LED devices, at distances of up to 50 µm from the emission plane. The results are consistent with simple optical modeling of the expected beam profiles.

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KW - confocal microscopy

KW - photonics

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