Projects per year
Abstract
Nanometric cutting of single crystal 3C-SiC on the three principal crystal orientations at various cutting temperatures spanning from 300 K to 3000 K was investigated by the use of molecular dynamics (MD) simulation. The dominance of the (111) cleavage was observed for all the tested temperatures. An observation of particular interest was the shift to the (110) cleavage at cutting temperatures higher than 2000 K. Another key finding was the increase of anisotropy in specific cutting energy from ~30% at 300 K to ~44% at 1400 K, followed by a drop to ~36% and ~24% at 1700 K and 2000 K, respectively. The obtained results also indicated that the specific cutting energies required for cutting surfaces of different orientations decrease by 33%-43% at 2000 K compared to what are required at 300 K. Moreover, the position of stagnation region was observed to vary with changes in temperature and crystallographic orientation. Further analysis revealed that the subsurface deformation was maximum on the (111) surface whereas it was minimum on the (110) plane. This is attributable to the occurrence of cleavage and the location of the stagnation region. In addition, the amount of subsurface damage scaled linearly with the increase of cutting temperature. A vortex flow of atoms beneath the cutting tool was also observed, which is qualitatively analogous to the plastic flow of silicon. The simulations also predicted that the atom-by-atom attrition wear and plastic deformation of the diamond cutting tool could be alleviated while cutting at high temperatures. Nevertheless, chemical wear i.e. dissolution-diffusion and adhesion wear is plausible to be accelerated at high temperatures.
Original language | English |
---|---|
Pages (from-to) | 71409-71424 |
Number of pages | 16 |
Journal | RSC Advances |
Volume | 6 |
Issue number | 75 |
Early online date | 19 Jul 2016 |
DOIs | |
Publication status | Published - 27 Jul 2016 |
Keywords
- 3C–SiC
- nanometric cutting
- chemical wear
Fingerprint
Dive into the research topics of 'Atomic-scale characterization of occurring phenomena during hot nanometric cutting of single crystal 3C-SiC'. Together they form a unique fingerprint.Profiles
Projects
- 2 Finished
-
Wear mechanism of single crystal diamond tool during nanometric cutting of SiC (Newton Funds)
Luo, X. (Principal Investigator)
1/04/15 → 15/09/17
Project: Research
-
Micro-3D: Miniature Flexible & Reconfigurable Manufacturing System for 3D Micro-products
Luo, X. (Principal Investigator), Ion, W. (Co-investigator), Qin, Y. (Co-investigator), Jagadeesan, A. P. (Researcher) & Zeng, Q. (Researcher)
EPSRC (Engineering and Physical Sciences Research Council)
1/07/13 → 31/12/17
Project: Research
Datasets
-
Atomic-scale characterization of occurring phenomena during hot nanometric cutting of single crystal 3C-SiC
Zare Chavoshi, S. (Creator) & Luo, X. (Supervisor), University of Strathclyde, 28 Feb 2017
DOI: 10.15129/16093753-4ad7-4035-8e99-d2974a55c8fc
Dataset
Activities
- 1 Key-note speaker and plenary lectures at conferences
-
5th Asia Pacific Conference on Optics Manufacture Conference
Luo, X. (Keynote/plenary speaker)
31 Oct 2016Activity: Participating in or organising an event types › Key-note speaker and plenary lectures at conferences