Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy

C. Liu, C.J. Deatcher, M.G. Cheong, I.M. Watson

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	657-660
Number of pages	3
Journal	Institute of Physics Conference Series
Volume	180
Publication status	Published - 2003

Cite this

@article{4c3f51a3950e41e0a4fa9ae32a2e359d,

title = "Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy",

author = "C. Liu and C.J. Deatcher and M.G. Cheong and I.M. Watson",

note = "Proceedings of the 13th Conference on Microscopy of Semiconducting Materials, Cambridge, 2003",

year = "2003",

language = "English",

volume = "180",

pages = "657--660",

journal = "Institute of Physics Conference Series",

issn = "0951-3248",

publisher = "IOP Publishing Ltd.",

}

TY - JOUR

T1 - Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy

AU - Liu, C.

AU - Deatcher, C.J.

AU - Cheong, M.G.

AU - Watson, I.M.

N1 - Proceedings of the 13th Conference on Microscopy of Semiconducting Materials, Cambridge, 2003

PY - 2003

Y1 - 2003

M3 - Article

SN - 0951-3248

VL - 180

SP - 657

EP - 660

JO - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

ER -