Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy

C. Liu, C.J. Deatcher, M.G. Cheong, I.M. Watson

Research output: Contribution to journalArticle

LanguageEnglish
Pages657-660
Number of pages3
JournalInstitute of Physics Conference Series
Volume180
Publication statusPublished - 2003

Cite this

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title = "Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy",
author = "C. Liu and C.J. Deatcher and M.G. Cheong and I.M. Watson",
note = "Proceedings of the 13th Conference on Microscopy of Semiconducting Materials, Cambridge, 2003",
year = "2003",
language = "English",
volume = "180",
pages = "657--660",
journal = "Institute of Physics Conference Series",
issn = "0951-3248",
publisher = "IOP Publishing Ltd.",

}

Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy. / Liu, C.; Deatcher, C.J.; Cheong, M.G.; Watson, I.M.

In: Institute of Physics Conference Series, Vol. 180, 2003, p. 657-660.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Atomic force microscopy of InGaN-based structures grown by metal-organic vapour phase epitaxy

AU - Liu, C.

AU - Deatcher, C.J.

AU - Cheong, M.G.

AU - Watson, I.M.

N1 - Proceedings of the 13th Conference on Microscopy of Semiconducting Materials, Cambridge, 2003

PY - 2003

Y1 - 2003

M3 - Article

VL - 180

SP - 657

EP - 660

JO - Institute of Physics Conference Series

T2 - Institute of Physics Conference Series

JF - Institute of Physics Conference Series

SN - 0951-3248

ER -