### Abstract

Original language | English |
---|---|

Pages (from-to) | 157-162 |

Number of pages | 6 |

Journal | Journal of Non-Crystalline Solids |

Volume | 190 |

Issue number | 1-2 |

DOIs | |

Publication status | Published - 1995 |

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### Keywords

- metastable defects
- annealing
- electrons
- non-crystalline solids

### Cite this

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*Journal of Non-Crystalline Solids*, vol. 190, no. 1-2, pp. 157-162. https://doi.org/10.1016/0022-3093(95)00269-3

**Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?** / Gleskova, Helena; Wagner, S.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

AU - Gleskova, Helena

AU - Wagner, S.

N1 - Invited journal contribution

PY - 1995

Y1 - 1995

N2 - Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

AB - Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

KW - metastable defects

KW - annealing

KW - electrons

KW - non-crystalline solids

U2 - 10.1016/0022-3093(95)00269-3

DO - 10.1016/0022-3093(95)00269-3

M3 - Article

VL - 190

SP - 157

EP - 162

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

IS - 1-2

ER -