Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Helena Gleskova, S. Wagner

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.
LanguageEnglish
Pages157-162
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume190
Issue number1-2
DOIs
Publication statusPublished - 1995

Fingerprint

Annealing
Defects
free electrons
annealing
Electrons
defects
electrons
Defect density
Amorphous silicon
luminous intensity
amorphous silicon
Carrier concentration
Lighting
illumination
Heating
conductivity
Temperature
electrical resistivity
heating
temperature

Keywords

  • metastable defects
  • annealing
  • electrons
  • non-crystalline solids

Cite this

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title = "Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?",
abstract = "Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.",
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author = "Helena Gleskova and S. Wagner",
note = "Invited journal contribution",
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Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons? / Gleskova, Helena; Wagner, S.

In: Journal of Non-Crystalline Solids, Vol. 190, No. 1-2, 1995, p. 157-162.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

AU - Gleskova, Helena

AU - Wagner, S.

N1 - Invited journal contribution

PY - 1995

Y1 - 1995

N2 - Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

AB - Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.

KW - metastable defects

KW - annealing

KW - electrons

KW - non-crystalline solids

U2 - 10.1016/0022-3093(95)00269-3

DO - 10.1016/0022-3093(95)00269-3

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JO - Journal of Non-Crystalline Solids

T2 - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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