Are both thermal and light-induced annealing of metastable defects in a-Si:H driven by electrons?

Helena Gleskova, S. Wagner

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Results of a search for a unifying rate law for the annealing of metastable defects in hydrogenated amorphous silicon (a-Si:H) are reported. The hypothesis that defect annealing by both heating or illumination is driven by the density of free electrons was tested. This hypothesis is formulated via the rate equation , where N is the defect density, t is the time, A is a constant, n is the free electron density and f(T) is a function of temperature derived from a distribution of annealing energies. The model fits two sets of data, with light-intensity and electrical conductivity as the independent variables, reasonably well, with ranging from 0.39 to 0.76, but not the third set, where the temperature was varied.
Original languageEnglish
Pages (from-to)157-162
Number of pages6
JournalJournal of Non-Crystalline Solids
Volume190
Issue number1-2
DOIs
Publication statusPublished - 1995

Keywords

  • metastable defects
  • annealing
  • electrons
  • non-crystalline solids

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