Abstract
| Language | English |
|---|---|
| Pages | 684-685 |
| Number of pages | 2 |
| Journal | Microscopy and Microanalysis |
| Volume | 18 |
| Issue number | S2 |
| DOIs | |
| Publication status | Published - 2012 |
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Keywords
- semiconductor thin films
- electron channeling
- nanotechnology
Cite this
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Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films. / Trager-Cowan, Carol; Gunasekar, Naresh; Hourahine, Benjamin; Edwards, Paul; Bruckbauer, Jochen; Martin, Robert; Mauder, Christof; Day, Austin; England, Gordon; Winkelmann, Aimo; Parbrook, Peter; Wilkinson, Anjus.
In: Microscopy and Microanalysis, Vol. 18, No. S2, 2012, p. 684-685.Research output: Contribution to journal › Conference Contribution
TY - JOUR
T1 - Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films
AU - Trager-Cowan, Carol
AU - Gunasekar, Naresh
AU - Hourahine, Benjamin
AU - Edwards, Paul
AU - Bruckbauer, Jochen
AU - Martin, Robert
AU - Mauder, Christof
AU - Day, Austin
AU - England, Gordon
AU - Winkelmann, Aimo
AU - Parbrook, Peter
AU - Wilkinson, Anjus
N1 - Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.
PY - 2012
Y1 - 2012
N2 - We are now all familiar with the bright blue, green and white LEDs that light up our electronic appliances; decorate our streets and buildings and illuminate airport runways. However, the ultimate performance of these nitride semiconductor based LEDs is limited by extended defects such as threading dislocations (TDs), partial dislocations (PDs) and stacking faults (SFs). If we want to develop LEDs to be an effective replacement for the light bulb, or have sufficient power to purify water; we need to eliminate these defects as they act as scattering centres for light and charge carriers and give rise to nonradiative recombination and to leakage currents, severely limiting device performance. The capability to rapidly detect and analyze TDs, PDs and SFs, with negligible sample preparation, represents a real step forward in the development of more efficient nitride-based semiconductor devices
AB - We are now all familiar with the bright blue, green and white LEDs that light up our electronic appliances; decorate our streets and buildings and illuminate airport runways. However, the ultimate performance of these nitride semiconductor based LEDs is limited by extended defects such as threading dislocations (TDs), partial dislocations (PDs) and stacking faults (SFs). If we want to develop LEDs to be an effective replacement for the light bulb, or have sufficient power to purify water; we need to eliminate these defects as they act as scattering centres for light and charge carriers and give rise to nonradiative recombination and to leakage currents, severely limiting device performance. The capability to rapidly detect and analyze TDs, PDs and SFs, with negligible sample preparation, represents a real step forward in the development of more efficient nitride-based semiconductor devices
KW - semiconductor thin films
KW - electron channeling
KW - nanotechnology
UR - http://journals.cambridge.org/action/displayFulltext?type=1&fid=8758629&jid=MAM&volumeId=18&issueId=S2&aid=8758628&bodyId=&membershipNumber=&societyETOCSession=
U2 - 10.1017/S1431927612005272
DO - 10.1017/S1431927612005272
M3 - Conference Contribution
VL - 18
SP - 684
EP - 685
JO - Microscopy and Microanalysis
T2 - Microscopy and Microanalysis
JF - Microscopy and Microanalysis
SN - 1431-9276
IS - S2
ER -