Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films

Carol Trager-Cowan, Naresh Gunasekar, Benjamin Hourahine, Paul Edwards, Jochen Bruckbauer, Robert Martin, Christof Mauder, Austin Day, Gordon England, Aimo Winkelmann, Peter Parbrook, Anjus Wilkinson

Research output: Contribution to journalConference Contribution

1 Citation (Scopus)

Abstract

We are now all familiar with the bright blue, green and white LEDs that light up our electronic appliances; decorate our streets and buildings and illuminate airport runways. However, the ultimate performance of these nitride semiconductor based LEDs is limited by extended defects such as threading dislocations (TDs), partial dislocations (PDs) and stacking faults (SFs). If we want to develop LEDs to be an effective replacement for the light bulb, or have sufficient power to purify water; we need to eliminate these defects as they act as scattering centres for light and charge carriers and give rise to nonradiative recombination and to leakage currents, severely limiting device performance. The capability to rapidly detect and analyze TDs, PDs and SFs, with negligible sample preparation, represents a real step forward in the development of more efficient nitride-based semiconductor devices
LanguageEnglish
Pages684-685
Number of pages2
JournalMicroscopy and Microanalysis
Volume18
Issue numberS2
DOIs
Publication statusPublished - 2012

Fingerprint

Semiconductors
Dislocations (crystals)
Nitrides
nitrides
Electrons
Semiconductor materials
Light emitting diodes
Imaging techniques
Light
Thin films
light emitting diodes
Stacking faults
thin films
crystal defects
Airports
Equipment and Supplies
electrons
Airport runways
runways
Defects

Keywords

  • semiconductor thin films
  • electron channeling
  • nanotechnology

Cite this

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title = "Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films",
abstract = "We are now all familiar with the bright blue, green and white LEDs that light up our electronic appliances; decorate our streets and buildings and illuminate airport runways. However, the ultimate performance of these nitride semiconductor based LEDs is limited by extended defects such as threading dislocations (TDs), partial dislocations (PDs) and stacking faults (SFs). If we want to develop LEDs to be an effective replacement for the light bulb, or have sufficient power to purify water; we need to eliminate these defects as they act as scattering centres for light and charge carriers and give rise to nonradiative recombination and to leakage currents, severely limiting device performance. The capability to rapidly detect and analyze TDs, PDs and SFs, with negligible sample preparation, represents a real step forward in the development of more efficient nitride-based semiconductor devices",
keywords = "semiconductor thin films , electron channeling, nanotechnology",
author = "Carol Trager-Cowan and Naresh Gunasekar and Benjamin Hourahine and Paul Edwards and Jochen Bruckbauer and Robert Martin and Christof Mauder and Austin Day and Gordon England and Aimo Winkelmann and Peter Parbrook and Anjus Wilkinson",
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Applications of electron channeling contrast imaging for characterizing nitride semiconductor thin films. / Trager-Cowan, Carol; Gunasekar, Naresh; Hourahine, Benjamin; Edwards, Paul; Bruckbauer, Jochen; Martin, Robert; Mauder, Christof; Day, Austin; England, Gordon; Winkelmann, Aimo; Parbrook, Peter; Wilkinson, Anjus.

In: Microscopy and Microanalysis, Vol. 18, No. S2, 2012, p. 684-685.

Research output: Contribution to journalConference Contribution

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AU - Trager-Cowan, Carol

AU - Gunasekar, Naresh

AU - Hourahine, Benjamin

AU - Edwards, Paul

AU - Bruckbauer, Jochen

AU - Martin, Robert

AU - Mauder, Christof

AU - Day, Austin

AU - England, Gordon

AU - Winkelmann, Aimo

AU - Parbrook, Peter

AU - Wilkinson, Anjus

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AB - We are now all familiar with the bright blue, green and white LEDs that light up our electronic appliances; decorate our streets and buildings and illuminate airport runways. However, the ultimate performance of these nitride semiconductor based LEDs is limited by extended defects such as threading dislocations (TDs), partial dislocations (PDs) and stacking faults (SFs). If we want to develop LEDs to be an effective replacement for the light bulb, or have sufficient power to purify water; we need to eliminate these defects as they act as scattering centres for light and charge carriers and give rise to nonradiative recombination and to leakage currents, severely limiting device performance. The capability to rapidly detect and analyze TDs, PDs and SFs, with negligible sample preparation, represents a real step forward in the development of more efficient nitride-based semiconductor devices

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