Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

G.J. Valentine; A. Kemp; D. Burns; F. Balembois; P. Georges; H. Bernas; A. Aron; G. Aka; W. Sibbett; A. Brun

Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

G.J. Valentine, A. Kemp, D. Burns, F. Balembois, P. Georges, H. Bernas, A. Aron, G. Aka, W. Sibbett, A. Brun

Institute Of Photonics

Research output: Contribution to conference › Paper › peer-review

Abstract

Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

Original language	English
Publication status	Unpublished - 2000
Event	Conference on Lasers and Electro Optics Europe - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000

Conference

Conference	Conference on Lasers and Electro Optics Europe
Abbreviated title	CLEO Europe
Country	France
City	Nice
Period	10/09/00 → 15/09/00

Keywords

ion implanted semiconductor
saturable-absorber mirror
modelocking
femtosecond
low threshold yb
YCOB laser

Cite this

@conference{9effe949e6b744d09ff14c2b8897f5fd,

title = "Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser",

abstract = "Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.",

keywords = "ion implanted semiconductor, saturable-absorber mirror, modelocking, femtosecond, low threshold yb, YCOB laser",

author = "G.J. Valentine and A. Kemp and D. Burns and F. Balembois and P. Georges and H. Bernas and A. Aron and G. Aka and W. Sibbett and A. Brun",

note = "AHR; Conference on Lasers and Electro Optics Europe, CLEO Europe ; Conference date: 10-09-2000 Through 15-09-2000",

year = "2000",

language = "English",

}

Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. / Valentine, G.J.; Kemp, A.; Burns, D.; Balembois, F.; Georges, P.; Bernas, H.; Aron, A.; Aka, G.; Sibbett, W.; Brun, A.

2000. Paper presented at Conference on Lasers and Electro Optics Europe, Nice, France.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

AU - Valentine, G.J.

AU - Kemp, A.

AU - Burns, D.

AU - Balembois, F.

AU - Georges, P.

AU - Bernas, H.

AU - Aron, A.

AU - Aka, G.

AU - Sibbett, W.

AU - Brun, A.

N1 - AHR

PY - 2000

Y1 - 2000

N2 - Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

AB - Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.

KW - ion implanted semiconductor

KW - saturable-absorber mirror

KW - modelocking

KW - femtosecond

KW - low threshold yb

KW - YCOB laser

M3 - Paper

T2 - Conference on Lasers and Electro Optics Europe

Y2 - 10 September 2000 through 15 September 2000

ER -