Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser

G.J. Valentine, A. Kemp, D. Burns, F. Balembois, P. Georges, H. Bernas, A. Aron, G. Aka, W. Sibbett, A. Brun

Research output: Contribution to conferencePaper

Abstract

Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.
Original languageEnglish
Publication statusUnpublished - 2000
EventConference on Lasers and Electro Optics Europe - Nice, France
Duration: 10 Sep 200015 Sep 2000

Conference

ConferenceConference on Lasers and Electro Optics Europe
Abbreviated titleCLEO Europe
CountryFrance
CityNice
Period10/09/0015/09/00

Keywords

  • ion implanted semiconductor
  • saturable-absorber mirror
  • modelocking
  • femtosecond
  • low threshold yb
  • YCOB laser

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    Valentine, G. J., Kemp, A., Burns, D., Balembois, F., Georges, P., Bernas, H., ... Brun, A. (2000). Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. Paper presented at Conference on Lasers and Electro Optics Europe, Nice, France.