Abstract
| Language | English |
|---|---|
| Publication status | Unpublished - 2000 |
| Event | Conference on Lasers and Electro Optics Europe - Nice, France Duration: 10 Sep 2000 → 15 Sep 2000 |
Conference
| Conference | Conference on Lasers and Electro Optics Europe |
|---|---|
| Abbreviated title | CLEO Europe |
| Country | France |
| City | Nice |
| Period | 10/09/00 → 15/09/00 |
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Keywords
- ion implanted semiconductor
- saturable-absorber mirror
- modelocking
- femtosecond
- low threshold yb
- YCOB laser
Cite this
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Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser. / Valentine, G.J.; Kemp, A.; Burns, D.; Balembois, F.; Georges, P.; Bernas, H.; Aron, A.; Aka, G.; Sibbett, W.; Brun, A.
2000. Paper presented at Conference on Lasers and Electro Optics Europe, Nice, France.Research output: Contribution to conference › Paper
TY - CONF
T1 - Application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser
AU - Valentine, G.J.
AU - Kemp, A.
AU - Burns, D.
AU - Balembois, F.
AU - Georges, P.
AU - Bernas, H.
AU - Aron, A.
AU - Aka, G.
AU - Sibbett, W.
AU - Brun, A.
N1 - AHR
PY - 2000
Y1 - 2000
N2 - Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.
AB - Paper discussing the application of an ion implanted semiconductor saturable-absorber mirror to innitiate modelocking of a fetmosecond, low threshold Yb:YCOB laser.
KW - ion implanted semiconductor
KW - saturable-absorber mirror
KW - modelocking
KW - femtosecond
KW - low threshold yb
KW - YCOB laser
M3 - Paper
ER -