Anomalous ion channeling in AlInN/GaN bilayers: Determination of the strain state

K. Lorenz, N. Franco, E. Alves, I.M. Watson, R.W. Martin, K.P. O'Donnell

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Abstract

Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN]=17.1%.
Original languageEnglish
Pages (from-to)085501
JournalPhysical Review Letters
Volume97
DOIs
Publication statusPublished - 2006

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Keywords

  • photonics
  • lasers
  • optics
  • quantum electronics
  • physics

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