Abstract
Monte Carlo simulations of anomalous ion channeling in near-lattice-matched AlInN/GaN bilayers allow an accurate determination of the strain state of AlInN by Rutherford backscattering or channeling. Although these strain estimates agree well with x-ray diffraction (XRD) results, XRD composition estimates are shown to have limited accuracy, due to a possible deviation from Vegard's law, which we quantify for this alloy. As the InN fraction increases from 13% to 19%, the strain in AlInN films changes from tensile to compressive with lattice matching predicted to occur at [InN]=17.1%.
Original language | English |
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Pages (from-to) | 085501 |
Journal | Physical Review Letters |
Volume | 97 |
DOIs | |
Publication status | Published - 2006 |
Keywords
- photonics
- lasers
- optics
- quantum electronics
- physics