Anomalous composition dependence of optical energies of MBE-grown InGaN

I. Fernandez-Torrente, D. Amabile, R. W. Martin, K. P. O'Donnell, J. F.W. Mosselmans, E. Calleja, F. B. Naranjo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

A direct comparison of the optical energies of MBE- and MOVPE-grown In xGa1-xN epilayers of similar InN content is performed for the first time. The InN fraction in the 7 MBE samples examined ranged from x ∼ 0.11 to x ∼ 0.35 while the range in available MOVPE epilayers is [0, 0.4]. Wavelength Dispersive X-ray (WDX) and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopies were used to measure composition and local structure (alloy character) of the samples. Cathodoluminescence (CL) spectroscopy in situ, ex situ photoluminescence (PL) mapping and large-area optical absorption spectroscopy were used to measure various optical energies. The composition dependence of the optical energies is determined by the growth method. The absorption bandgap and luminescence peak energies vary linearly with x for both growth methods, suggesting a near-zero value of the bowing parameter. But the energy intercept at zero InN content in MOVPE samples is close to the wurtzite-GaN bandgap of 3.4 eV at room temperature, as expected, while the equivalent for MBE samples falls near 3.2 eV.

LanguageEnglish
Pages673-676
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume798
Publication statusPublished - 1 Dec 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: 1 Dec 20035 Dec 2003

Fingerprint

Metallorganic vapor phase epitaxy
Molecular beam epitaxy
Epilayers
Energy gap
Chemical analysis
Extended X ray absorption fine structure spectroscopy
Bending (forming)
Cathodoluminescence
Absorption spectroscopy
Light absorption
energy
Luminescence
Photoluminescence
Spectroscopy
X rays
Wavelength
cathodoluminescence
wurtzite
spectroscopy
absorption spectroscopy

Keywords

  • semiconducting indium compounds
  • absorption spectroscopy
  • cathodoluminescence
  • energy gap
  • light emitting diodes
  • metallorganic vapor phase epitaxy
  • molecular beam epitaxy
  • parameter estimation
  • photoluminescence

Cite this

Fernandez-Torrente, I., Amabile, D., Martin, R. W., O'Donnell, K. P., Mosselmans, J. F. W., Calleja, E., & Naranjo, F. B. (2003). Anomalous composition dependence of optical energies of MBE-grown InGaN. Materials Research Society Symposium - Proceedings, 798, 673-676.
Fernandez-Torrente, I. ; Amabile, D. ; Martin, R. W. ; O'Donnell, K. P. ; Mosselmans, J. F.W. ; Calleja, E. ; Naranjo, F. B. / Anomalous composition dependence of optical energies of MBE-grown InGaN. In: Materials Research Society Symposium - Proceedings. 2003 ; Vol. 798. pp. 673-676.
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abstract = "A direct comparison of the optical energies of MBE- and MOVPE-grown In xGa1-xN epilayers of similar InN content is performed for the first time. The InN fraction in the 7 MBE samples examined ranged from x ∼ 0.11 to x ∼ 0.35 while the range in available MOVPE epilayers is [0, 0.4]. Wavelength Dispersive X-ray (WDX) and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopies were used to measure composition and local structure (alloy character) of the samples. Cathodoluminescence (CL) spectroscopy in situ, ex situ photoluminescence (PL) mapping and large-area optical absorption spectroscopy were used to measure various optical energies. The composition dependence of the optical energies is determined by the growth method. The absorption bandgap and luminescence peak energies vary linearly with x for both growth methods, suggesting a near-zero value of the bowing parameter. But the energy intercept at zero InN content in MOVPE samples is close to the wurtzite-GaN bandgap of 3.4 eV at room temperature, as expected, while the equivalent for MBE samples falls near 3.2 eV.",
keywords = "semiconducting indium compounds, absorption spectroscopy, cathodoluminescence, energy gap, light emitting diodes, metallorganic vapor phase epitaxy, molecular beam epitaxy, parameter estimation, photoluminescence",
author = "I. Fernandez-Torrente and D. Amabile and Martin, {R. W.} and O'Donnell, {K. P.} and Mosselmans, {J. F.W.} and E. Calleja and Naranjo, {F. B.}",
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Fernandez-Torrente, I, Amabile, D, Martin, RW, O'Donnell, KP, Mosselmans, JFW, Calleja, E & Naranjo, FB 2003, 'Anomalous composition dependence of optical energies of MBE-grown InGaN' Materials Research Society Symposium - Proceedings, vol. 798, pp. 673-676.

Anomalous composition dependence of optical energies of MBE-grown InGaN. / Fernandez-Torrente, I.; Amabile, D.; Martin, R. W.; O'Donnell, K. P.; Mosselmans, J. F.W.; Calleja, E.; Naranjo, F. B.

In: Materials Research Society Symposium - Proceedings, Vol. 798, 01.12.2003, p. 673-676.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Anomalous composition dependence of optical energies of MBE-grown InGaN

AU - Fernandez-Torrente, I.

AU - Amabile, D.

AU - Martin, R. W.

AU - O'Donnell, K. P.

AU - Mosselmans, J. F.W.

AU - Calleja, E.

AU - Naranjo, F. B.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - A direct comparison of the optical energies of MBE- and MOVPE-grown In xGa1-xN epilayers of similar InN content is performed for the first time. The InN fraction in the 7 MBE samples examined ranged from x ∼ 0.11 to x ∼ 0.35 while the range in available MOVPE epilayers is [0, 0.4]. Wavelength Dispersive X-ray (WDX) and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopies were used to measure composition and local structure (alloy character) of the samples. Cathodoluminescence (CL) spectroscopy in situ, ex situ photoluminescence (PL) mapping and large-area optical absorption spectroscopy were used to measure various optical energies. The composition dependence of the optical energies is determined by the growth method. The absorption bandgap and luminescence peak energies vary linearly with x for both growth methods, suggesting a near-zero value of the bowing parameter. But the energy intercept at zero InN content in MOVPE samples is close to the wurtzite-GaN bandgap of 3.4 eV at room temperature, as expected, while the equivalent for MBE samples falls near 3.2 eV.

AB - A direct comparison of the optical energies of MBE- and MOVPE-grown In xGa1-xN epilayers of similar InN content is performed for the first time. The InN fraction in the 7 MBE samples examined ranged from x ∼ 0.11 to x ∼ 0.35 while the range in available MOVPE epilayers is [0, 0.4]. Wavelength Dispersive X-ray (WDX) and Extended X-ray Absorption Fine Structure (EXAFS) spectroscopies were used to measure composition and local structure (alloy character) of the samples. Cathodoluminescence (CL) spectroscopy in situ, ex situ photoluminescence (PL) mapping and large-area optical absorption spectroscopy were used to measure various optical energies. The composition dependence of the optical energies is determined by the growth method. The absorption bandgap and luminescence peak energies vary linearly with x for both growth methods, suggesting a near-zero value of the bowing parameter. But the energy intercept at zero InN content in MOVPE samples is close to the wurtzite-GaN bandgap of 3.4 eV at room temperature, as expected, while the equivalent for MBE samples falls near 3.2 eV.

KW - semiconducting indium compounds

KW - absorption spectroscopy

KW - cathodoluminescence

KW - energy gap

KW - light emitting diodes

KW - metallorganic vapor phase epitaxy

KW - molecular beam epitaxy

KW - parameter estimation

KW - photoluminescence

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VL - 798

SP - 673

EP - 676

JO - MRS Online Proceedings Library

T2 - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

ER -