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Abstract
Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
Original language | English |
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Article number | 095001 |
Number of pages | 5 |
Journal | Physical Review Letters |
Volume | 111 |
Issue number | 9 |
DOIs | |
Publication status | Published - 28 Aug 2013 |
Keywords
- fast electron transport
- silicon
- low-temperature resistivity
- ultra-intense laser pulses
- 3D hybrid-PIC simulations
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Dive into the research topics of 'Annular fast electron transport in silicon arising from low-temperature resistivity'. Together they form a unique fingerprint.Projects
- 1 Finished
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Multi-PetaWatt Laser-Plasma Interactions: A New Frontier in Physics
McKenna, P. (Fellow)
EPSRC (Engineering and Physical Sciences Research Council)
1/03/12 → 28/02/17
Project: Research Fellowship