Annular fast electron transport in silicon arising from low-temperature resistivity

David MacLellan; David Carroll; Ross Gray; Nicola Booth; Matthias Burza; Mike Desjarlais; F Du; Bruno Izquierdo; David Neely; Haydn Powell; Alex Robinson; Dean Rusby; Graeme Scott; Xiaohui Yuan; Claes-Goran Wahlstrom; Paul McKenna

doi:10.1103/PhysRevLett.111.095001

Annular fast electron transport in silicon arising from low-temperature resistivity

David MacLellan, David Carroll, Ross Gray, Nicola Booth, Matthias Burza, Mike Desjarlais, F Du, Bruno Izquierdo, David Neely, Haydn Powell, Alex Robinson, Dean Rusby, Graeme Scott, Xiaohui Yuan, Claes-Goran Wahlstrom, Paul McKenna

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Abstract

Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

Original language	English
Article number	095001
Number of pages	5
Journal	Physical Review Letters
Volume	111
Issue number	9
DOIs	https://doi.org/10.1103/PhysRevLett.111.095001
Publication status	Published - 28 Aug 2013

Keywords

fast electron transport
silicon
low-temperature resistivity
ultra-intense laser pulses
3D hybrid-PIC simulations

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10.1103/PhysRevLett.111.095001

MacLellan-etal-PRL2014-annular-fast-electron-transport-in-siliconFinal published version, 2.37 MBLicence: CC BY 4.0

Cite this

MacLellan, D., Carroll, D., Gray, R., Booth, N., Burza, M., Desjarlais, M., Du, F., Izquierdo, B., Neely, D., Powell, H., Robinson, A., Rusby, D., Scott, G., Yuan, X., Wahlstrom, C.-G., & McKenna, P. (2013). Annular fast electron transport in silicon arising from low-temperature resistivity. Physical Review Letters, 111(9), Article 095001. https://doi.org/10.1103/PhysRevLett.111.095001

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title = "Annular fast electron transport in silicon arising from low-temperature resistivity",

abstract = "Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.",

keywords = "fast electron transport, silicon, low-temperature resistivity, ultra-intense laser pulses, 3D hybrid-PIC simulations",

author = "David MacLellan and David Carroll and Ross Gray and Nicola Booth and Matthias Burza and Mike Desjarlais and F Du and Bruno Izquierdo and David Neely and Haydn Powell and Alex Robinson and Dean Rusby and Graeme Scott and Xiaohui Yuan and Claes-Goran Wahlstrom and Paul McKenna",

year = "2013",

month = aug,

day = "28",

doi = "10.1103/PhysRevLett.111.095001",

language = "English",

volume = "111",

journal = "Physical Review Letters",

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publisher = "American Physical Society",

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MacLellan, D, Carroll, D, Gray, R, Booth, N, Burza, M, Desjarlais, M, Du, F, Izquierdo, B, Neely, D, Powell, H, Robinson, A, Rusby, D, Scott, G, Yuan, X, Wahlstrom, C-G & McKenna, P 2013, 'Annular fast electron transport in silicon arising from low-temperature resistivity', Physical Review Letters, vol. 111, no. 9, 095001. https://doi.org/10.1103/PhysRevLett.111.095001

TY - JOUR

T1 - Annular fast electron transport in silicon arising from low-temperature resistivity

AU - MacLellan, David

AU - Carroll, David

AU - Gray, Ross

AU - Booth, Nicola

AU - Burza, Matthias

AU - Desjarlais, Mike

AU - Du, F

AU - Izquierdo, Bruno

AU - Neely, David

AU - Powell, Haydn

AU - Robinson, Alex

AU - Rusby, Dean

AU - Scott, Graeme

AU - Yuan, Xiaohui

AU - Wahlstrom, Claes-Goran

AU - McKenna, Paul

PY - 2013/8/28

Y1 - 2013/8/28

N2 - Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

AB - Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

KW - fast electron transport

KW - silicon

KW - low-temperature resistivity

KW - ultra-intense laser pulses

KW - 3D hybrid-PIC simulations

UR - http://journals.aps.org/prl/

U2 - 10.1103/PhysRevLett.111.095001

DO - 10.1103/PhysRevLett.111.095001

M3 - Article

SN - 0031-9007

VL - 111

JO - Physical Review Letters

JF - Physical Review Letters

IS - 9

M1 - 095001

ER -

Annular fast electron transport in silicon arising from low-temperature resistivity

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Multi-PetaWatt Laser-Plasma Interactions: A New Frontier in Physics

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Annular fast electron transport in silicon arising from low-temperature resistivity

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Multi-PetaWatt Laser-Plasma Interactions: A New Frontier in Physics

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