Annular fast electron transport in silicon arising from low-temperature resistivity

David MacLellan, David Carroll, Ross Gray, Nicola Booth, Matthias Burza, Mike Desjarlais, F Du, Bruno Izquierdo, David Neely, Haydn Powell, Alex Robinson, Dean Rusby, Graeme Scott, Xiaohui Yuan, Claes-Goran Wahlstrom, Paul McKenna

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Abstract

Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
Original languageEnglish
Article number095001
Number of pages5
JournalPhysical Review Letters
Volume111
Issue number9
DOIs
Publication statusPublished - 28 Aug 2013

Keywords

  • fast electron transport
  • silicon
  • low-temperature resistivity
  • ultra-intense laser pulses
  • 3D hybrid-PIC simulations

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