Annular fast electron transport in silicon arising from low-temperature resistivity

David MacLellan, David Carroll, Ross Gray, Nicola Booth, Matthias Burza, Mike Desjarlais, F Du, Bruno Izquierdo, David Neely, Haydn Powell, Alex Robinson, Dean Rusby, Graeme Scott, Xiaohui Yuan, Claes-Goran Wahlstrom, Paul McKenna

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
LanguageEnglish
Article number095001
Number of pages5
JournalPhysical Review Letters
Volume111
Issue number9
DOIs
Publication statusPublished - 28 Aug 2013

Fingerprint

temperature profiles
electron beams
electrical resistivity
silicon
profiles
pulses
magnetic fields
lasers
electrons
simulation
temperature

Keywords

  • fast electron transport
  • silicon
  • low-temperature resistivity
  • ultra-intense laser pulses
  • 3D hybrid-PIC simulations

Cite this

MacLellan, David ; Carroll, David ; Gray, Ross ; Booth, Nicola ; Burza, Matthias ; Desjarlais, Mike ; Du, F ; Izquierdo, Bruno ; Neely, David ; Powell, Haydn ; Robinson, Alex ; Rusby, Dean ; Scott, Graeme ; Yuan, Xiaohui ; Wahlstrom, Claes-Goran ; McKenna, Paul. / Annular fast electron transport in silicon arising from low-temperature resistivity. In: Physical Review Letters. 2013 ; Vol. 111, No. 9.
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MacLellan, D, Carroll, D, Gray, R, Booth, N, Burza, M, Desjarlais, M, Du, F, Izquierdo, B, Neely, D, Powell, H, Robinson, A, Rusby, D, Scott, G, Yuan, X, Wahlstrom, C-G & McKenna, P 2013, 'Annular fast electron transport in silicon arising from low-temperature resistivity' Physical Review Letters, vol. 111, no. 9, 095001. https://doi.org/10.1103/PhysRevLett.111.095001

Annular fast electron transport in silicon arising from low-temperature resistivity. / MacLellan, David; Carroll, David; Gray, Ross; Booth, Nicola; Burza, Matthias; Desjarlais, Mike; Du, F; Izquierdo, Bruno; Neely, David; Powell, Haydn; Robinson, Alex; Rusby, Dean; Scott, Graeme; Yuan, Xiaohui; Wahlstrom, Claes-Goran; McKenna, Paul.

In: Physical Review Letters, Vol. 111, No. 9, 095001, 28.08.2013.

Research output: Contribution to journalArticle

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T1 - Annular fast electron transport in silicon arising from low-temperature resistivity

AU - MacLellan, David

AU - Carroll, David

AU - Gray, Ross

AU - Booth, Nicola

AU - Burza, Matthias

AU - Desjarlais, Mike

AU - Du, F

AU - Izquierdo, Bruno

AU - Neely, David

AU - Powell, Haydn

AU - Robinson, Alex

AU - Rusby, Dean

AU - Scott, Graeme

AU - Yuan, Xiaohui

AU - Wahlstrom, Claes-Goran

AU - McKenna, Paul

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N2 - Fast electron transport in Si, driven by ultra-intense laser pulses, is investigated experimentally and via 3D hybrid-PIC simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.

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KW - fast electron transport

KW - silicon

KW - low-temperature resistivity

KW - ultra-intense laser pulses

KW - 3D hybrid-PIC simulations

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