Annealing effects on the microstructure of sputtered gold layers on oxidized silicon investigated by scanning electron microscopy and scanning probe microscopy

J.L. Plaza, S. Jacke, Y. Chen, R.E. Palmer

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structure of Au layers deposited by sputtering on oxidized p-type Si(100) substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300degreesC results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500degreesC, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces.

LanguageEnglish
Pages1137-1142
Number of pages6
JournalPhilosophical Magazine
Volume83
Issue number9
DOIs
Publication statusPublished - 21 Mar 2003

Fingerprint

gold
microscopy
microstructure
scanning electron microscopy
annealing
scanning
probes
silicon
cracks
temperature
voids
grain size
sputtering
augmentation

Keywords

  • tunneling microscopy
  • step arrays
  • films
  • surfaces

Cite this

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abstract = "The structure of Au layers deposited by sputtering on oxidized p-type Si(100) substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300degreesC results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500degreesC, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces.",
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Annealing effects on the microstructure of sputtered gold layers on oxidized silicon investigated by scanning electron microscopy and scanning probe microscopy. / Plaza, J.L.; Jacke, S.; Chen, Y.; Palmer, R.E.

In: Philosophical Magazine, Vol. 83, No. 9, 21.03.2003, p. 1137-1142.

Research output: Contribution to journalArticle

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AU - Plaza, J.L.

AU - Jacke, S.

AU - Chen, Y.

AU - Palmer, R.E.

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AB - The structure of Au layers deposited by sputtering on oxidized p-type Si(100) substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300degreesC results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500degreesC, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces.

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KW - step arrays

KW - films

KW - surfaces

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