Annealing effect on the structure characteristics of nano-scale damascene copper lines

T. Konkova, S. Mironov, Y. Ke, J. Onuki

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Abstract

High-resolution electron backscatter diffraction (EBSD) technique was applied for systematic and detailed study of grain structure and texture changes in various microstructural regions of nano-scale damascene copper lines after annealing in a wide temperature range of 200-500°C. To ensure reliability of the obtained results, large EBSD maps including several thousand grains were obtained in each case. Above 200°C, the grain structure was established to be surprisingly stable in both the overburden layer as well as within the lines. The grain growth in the lines was supposed to be suppressed by pinning effect of second-phase particles entrapped during electrodeposition process. 

Original languageEnglish
Title of host publication2013 IEEE International Interconnect Technology Conference, IITC 2013
Place of PublicationPiscataway, N.J.
PublisherIEEE
Number of pages3
ISBN (Print)9781479904389
DOIs
Publication statusPublished - 13 Jun 2013
Event2013 16th IEEE International Interconnect Technology Conference, IITC 2013 - Kyoto, Japan
Duration: 13 Jun 201315 Jun 2013

Conference

Conference2013 16th IEEE International Interconnect Technology Conference, IITC 2013
CountryJapan
CityKyoto
Period13/06/1315/06/13

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Keywords

  • annealing
  • copper
  • electrodeposition
  • electron diffraction
  • grain growth
  • nanoparticles
  • reliability
  • educational institutions
  • grain boundaries
  • microstructure
  • thermal stability
  • Cu
  • EBSD maps
  • grain structure
  • grain texture
  • high-resolution electron backscatter diffraction
  • nanoscale damascene copper lines
  • pinning effect
  • second-phase particles

Cite this

Konkova, T., Mironov, S., Ke, Y., & Onuki, J. (2013). Annealing effect on the structure characteristics of nano-scale damascene copper lines. In 2013 IEEE International Interconnect Technology Conference, IITC 2013 [6615574] Piscataway, N.J.: IEEE. https://doi.org/10.1109/IITC.2013.6615574