Angular dispersion of photons and phonons in a photonic crystal of selectively grown GaN pyramids containing an InxGa1-xN quantum well structure

D. Coquillat, J. Torres, M.L.V. dYerville, R. Legros, J.P. Lascaray, C. Liu, I.M. Watson, R.W. Martin, H.M.H. Chong, R.M. De La Rue

Research output: Contribution to journalArticle

Abstract

Angular-dependent reflection measurements were used to map out the dispersion relations of the resonant Bloch modes, and the angular dispersion of the phonon modes, in a photonic crystal consisting of selectively grown GaN pyramids containing a single InxGa1-xN/GaN quantum well. The dispersion of the photons exhibits strong photonic crystal characteristics, while the mean indium content of the 2 nm thickness InxGa1-xN layer was extracted from the angular dispersion of the phonon modes.
Original languageEnglish
Pages (from-to)652-655
Number of pages3
JournalPhysica Status Solidi A
Volume202
Issue number4
DOIs
Publication statusPublished - 2005

Keywords

  • photons
  • phonons
  • photonics
  • crystals
  • GaN pyramids

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