Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

A Redondo-Cubero; K Lorenz; E Wendler; S Magalhães; E Alves; D Carvalho; T Ben; F M Morales; R García; K P O'Donnell; C Wetzel

doi:10.1088/0957-4484/26/42/425703

Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

A Redondo-Cubero, K Lorenz, E Wendler, S Magalhães, E Alves, D Carvalho, T Ben, F M Morales, R García, K P O'Donnell, C Wetzel

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Abstract

Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N⁺ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×10¹⁶ cm^-2), the InGaN MQWs exhibit a high stability against ion beam mixing.

Original language	English
Article number	425703
Number of pages	6
Journal	Nanotechnology
Volume	26
Issue number	42
DOIs	https://doi.org/10.1088/0957-4484/26/42/425703
Publication status	Published - 1 Oct 2015

Keywords

implantation
InGaN
ion beam mixing
quantum wells

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10.1088/0957-4484/26/42/425703

Redondo-Cubero-etal-Nanotechnology2015-stability-of-InGaN-GaN-multiquantum-wells-against-ion-beamAccepted author manuscript, 1.45 MB

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title = "Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing",

abstract = "Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N+ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×1016 cm-2), the InGaN MQWs exhibit a high stability against ion beam mixing.",

keywords = "implantation, InGaN, ion beam mixing, quantum wells",

author = "A Redondo-Cubero and K Lorenz and E Wendler and S Magalh{\~a}es and E Alves and D Carvalho and T Ben and Morales, {F M} and R Garc{\'i}a and O'Donnell, {K P} and C Wetzel",

note = "This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/26/42/425703",

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T1 - Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

AU - Redondo-Cubero, A

AU - Lorenz, K

AU - Wendler, E

AU - Magalhães, S

AU - Alves, E

AU - Carvalho, D

AU - Ben, T

AU - Morales, F M

AU - García, R

AU - O'Donnell, K P

AU - Wetzel, C

N1 - This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0957-4484/26/42/425703

PY - 2015/10/1

Y1 - 2015/10/1

N2 - Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N+ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×1016 cm-2), the InGaN MQWs exhibit a high stability against ion beam mixing.

AB - Ion-induced damage and intermixing was evaluated in InGaN/GaN multi-quantum wells (MQWs) using 35 keV N+ implantation at room temperature. In situ ion channeling measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are uniformly distributed across the quantum well structure. Despite the extremely high fluences used (up to 4 ×1016 cm-2), the InGaN MQWs exhibit a high stability against ion beam mixing.

KW - implantation

KW - InGaN

KW - ion beam mixing

KW - quantum wells

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VL - 26

JO - Nanotechnology

JF - Nanotechnology

IS - 42

M1 - 425703

ER -

Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing

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Keywords

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