Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R Edwards, Tim Wernicke, Michael Kneissl, Robert W Martin

Research output: Contribution to journalArticle

7 Citations (Scopus)
114 Downloads (Pure)

Abstract

Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.
Original languageEnglish
Article number035020
Number of pages7
JournalSemiconductor Science and Technology
Volume32
Issue number3
DOIs
Publication statusPublished - 13 Feb 2017

Fingerprint

Energy gap
Doping (additives)
Secondary ion mass spectrometry
Chemical analysis
wavelengths
spectroscopy
X ray diffraction
X rays
Wavelength
x rays
Silicon
secondary ion mass spectrometry
Light emitting diodes
Fabrication
high resolution
diffraction
ultraviolet radiation
X-Ray Emission Spectrometry
aluminum gallium nitride
light emitting diodes

Keywords

  • dopant concentration
  • ultra violet light emitting diodes
  • wavelength dispersive X-ray spectroscopy
  • high resolution X-ray diffraction
  • doping concentrations
  • semiconductors
  • dopant composition

Cite this

@article{898953878c8b43d793c2a1ad0379f6d2,
title = "Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy",
abstract = "Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.",
keywords = "dopant concentration, ultra violet light emitting diodes, wavelength dispersive X-ray spectroscopy, high resolution X-ray diffraction, doping concentrations, semiconductors, dopant composition",
author = "Gunnar Kusch and Frank Mehnke and Johannes Enslin and Edwards, {Paul R} and Tim Wernicke and Michael Kneissl and Martin, {Robert W}",
year = "2017",
month = "2",
day = "13",
doi = "10.1088/1361-6641/aa58cf",
language = "English",
volume = "32",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
number = "3",

}

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy. / Kusch, Gunnar; Mehnke, Frank; Enslin, Johannes; Edwards, Paul R; Wernicke, Tim; Kneissl, Michael; Martin, Robert W.

In: Semiconductor Science and Technology, Vol. 32, No. 3, 035020, 13.02.2017.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

AU - Kusch, Gunnar

AU - Mehnke, Frank

AU - Enslin, Johannes

AU - Edwards, Paul R

AU - Wernicke, Tim

AU - Kneissl, Michael

AU - Martin, Robert W

PY - 2017/2/13

Y1 - 2017/2/13

N2 - Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

AB - Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

KW - dopant concentration

KW - ultra violet light emitting diodes

KW - wavelength dispersive X-ray spectroscopy

KW - high resolution X-ray diffraction

KW - doping concentrations

KW - semiconductors

KW - dopant composition

UR - http://iopscience.iop.org/journal/0268-1242

U2 - 10.1088/1361-6641/aa58cf

DO - 10.1088/1361-6641/aa58cf

M3 - Article

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

M1 - 035020

ER -