Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R Edwards, Tim Wernicke, Michael Kneissl, Robert W Martin

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Abstract

Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.
Original languageEnglish
Article number035020
Number of pages7
JournalSemiconductor Science and Technology
Volume32
Issue number3
DOIs
Publication statusPublished - 13 Feb 2017

Keywords

  • dopant concentration
  • ultra violet light emitting diodes
  • wavelength dispersive X-ray spectroscopy
  • high resolution X-ray diffraction
  • doping concentrations
  • semiconductors
  • dopant composition

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