Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Gunnar Kusch; Frank Mehnke; Johannes Enslin; Paul R Edwards; Tim Wernicke; Michael Kneissl; Robert W Martin

doi:10.1088/1361-6641/aa58cf

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Gunnar Kusch, Frank Mehnke, Johannes Enslin, Paul R Edwards, Tim Wernicke, Michael Kneissl, Robert W Martin

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Abstract

Detailed knowledge of the dopant concentration and composition of wide band gap Al_xGa_1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap Al_xGa_1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH₄/group-III ratio, measuring Si concentrations between 3×10¹⁸ cm⁻³ and 2.8×10¹⁹ cm⁻³, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

Original language	English
Article number	035020
Number of pages	7
Journal	Semiconductor Science and Technology
Volume	32
Issue number	3
DOIs	https://doi.org/10.1088/1361-6641/aa58cf
Publication status	Published - 13 Feb 2017

Keywords

dopant concentration
ultra violet light emitting diodes
wavelength dispersive X-ray spectroscopy
high resolution X-ray diffraction
doping concentrations
semiconductors
dopant composition

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10.1088/1361-6641/aa58cfLicence: CC BY 3.0

Kusch-etal-SST2017-Analysis-of-doping-concentration-and-composition-in-wide-bandgap-AlGaN
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Cite this

@article{898953878c8b43d793c2a1ad0379f6d2,

title = "Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy",

abstract = "Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.",

keywords = "dopant concentration, ultra violet light emitting diodes, wavelength dispersive X-ray spectroscopy, high resolution X-ray diffraction, doping concentrations, semiconductors, dopant composition",

author = "Gunnar Kusch and Frank Mehnke and Johannes Enslin and Edwards, {Paul R} and Tim Wernicke and Michael Kneissl and Martin, {Robert W}",

year = "2017",

month = feb,

day = "13",

doi = "10.1088/1361-6641/aa58cf",

language = "English",

volume = "32",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

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TY - JOUR

T1 - Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

AU - Kusch, Gunnar

AU - Mehnke, Frank

AU - Enslin, Johannes

AU - Edwards, Paul R

AU - Wernicke, Tim

AU - Kneissl, Michael

AU - Martin, Robert W

PY - 2017/2/13

Y1 - 2017/2/13

N2 - Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

AB - Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet (UV) light emitting diodes (LEDs). This paper demonstrates the capabilities of wavelength dispersive X-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution X-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×1018 cm−3 and 2.8×1019 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.

KW - dopant concentration

KW - ultra violet light emitting diodes

KW - wavelength dispersive X-ray spectroscopy

KW - high resolution X-ray diffraction

KW - doping concentrations

KW - semiconductors

KW - dopant composition

UR - http://iopscience.iop.org/journal/0268-1242

U2 - 10.1088/1361-6641/aa58cf

DO - 10.1088/1361-6641/aa58cf

M3 - Article

SN - 0268-1242

VL - 32

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 3

M1 - 035020

ER -

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Abstract

Keywords

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Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

Epsrc Doctoral Training Grant | Kusch, Gunnar

Data resulting from the investigation of wide bandgap AlGaN:Si by wavelength dispersive X-Ray measurements

CAMECA SX100

Cite this

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive X-ray spectroscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Projects

Advanced III-nitride materials for next generation UV emitters used in water purification, environmental protection and local network communication

Epsrc Doctoral Training Grant | Kusch, Gunnar

Datasets

Data resulting from the investigation of wide bandgap AlGaN:Si by wavelength dispersive X-Ray measurements

Equipment

CAMECA SX100

Cite this