Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

C.X. Ren, B. Rouet-Leduc, J.T. Griffiths, E. Bohacek, M.J. Wallace, P.R. Edwards, M.A. Hopkins, D.W.E. Allsopp, M.J. Kappers, R.W. Martin, R.A. Oliver

Research output: Contribution to journalArticle

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Abstract

The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.
LanguageEnglish
Pages118-124
Number of pages7
JournalSuperlattices and Microstructures
Volume99
Early online date26 Mar 2016
DOIs
Publication statusPublished - 30 Nov 2016

Fingerprint

Electroluminescence
electroluminescence
Light emitting diodes
light emitting diodes
Defects
defects
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
Cathodoluminescence
cathodoluminescence
Coalescence
coalescing
Semiconductor quantum wells
bundles
inhomogeneity
quantum wells
wafers
trends

Keywords

  • semiconductor
  • LED
  • defect
  • electroluminescence

Cite this

Ren, C. X., Rouet-Leduc, B., Griffiths, J. T., Bohacek, E., Wallace, M. J., Edwards, P. R., ... Oliver, R. A. (2016). Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. Superlattices and Microstructures, 99, 118-124. https://doi.org/10.1016/j.spmi.2016.03.036
Ren, C.X. ; Rouet-Leduc, B. ; Griffiths, J.T. ; Bohacek, E. ; Wallace, M.J. ; Edwards, P.R. ; Hopkins, M.A. ; Allsopp, D.W.E. ; Kappers, M.J. ; Martin, R.W. ; Oliver, R.A. / Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. In: Superlattices and Microstructures. 2016 ; Vol. 99. pp. 118-124.
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abstract = "The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20{\%} of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.",
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Ren, CX, Rouet-Leduc, B, Griffiths, JT, Bohacek, E, Wallace, MJ, Edwards, PR, Hopkins, MA, Allsopp, DWE, Kappers, MJ, Martin, RW & Oliver, RA 2016, 'Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs' Superlattices and Microstructures, vol. 99, pp. 118-124. https://doi.org/10.1016/j.spmi.2016.03.036

Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs. / Ren, C.X.; Rouet-Leduc, B.; Griffiths, J.T.; Bohacek, E.; Wallace, M.J.; Edwards, P.R.; Hopkins, M.A.; Allsopp, D.W.E.; Kappers, M.J.; Martin, R.W.; Oliver, R.A.

In: Superlattices and Microstructures, Vol. 99, 30.11.2016, p. 118-124.

Research output: Contribution to journalArticle

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T1 - Analysis of defect-related inhomogeneous electroluminescence in InGaN/GaN QW LEDs

AU - Ren, C.X.

AU - Rouet-Leduc, B.

AU - Griffiths, J.T.

AU - Bohacek, E.

AU - Wallace, M.J.

AU - Edwards, P.R.

AU - Hopkins, M.A.

AU - Allsopp, D.W.E.

AU - Kappers, M.J.

AU - Martin, R.W.

AU - Oliver, R.A.

PY - 2016/11/30

Y1 - 2016/11/30

N2 - The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

AB - The inhomogeneous electroluminescence (EL) of InGaN/GaN quantum well light emitting diode structures was investigated in this study. Electroluminescence hyperspectral images showed that inhomogeneities in the form of bright spots exhibited spectrally blue-shifted and broadened emission. Scanning electron microscopy combined with cathodoluminescence (SEM-CL) was used to identify hexagonal pits at the centre of approximately 20% of these features. Scanning transmission electron microscopy imaging with energy dispersive X-ray spectroscopy (STEM-EDX) indicated there may be p-doped AlGaN within the active region caused by the presence of the pit. Weak beam dark-field TEM (WBDF-TEM) revealed the presence of bundles of dislocations associated with the pit, suggesting the surface features which cause the inhomogeneous EL may occur at coalescence boundaries, supported by trends in the number of features observed across the wafer.

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