An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

N.M. Boyall, K. Durose, I.M. Watson

Research output: Contribution to journalArticle

Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.
Original languageEnglish
JournalMRS Online Proceedings Library
Volume743
Publication statusPublished - 2003

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Cathodoluminescence
cathodoluminescence
Semiconductor quantum wells
Luminescence
Electron beams
quantum wells
electron beams
luminescence
degradation
Transmission electron microscopy
Degradation
transmission electron microscopy
decay
in situ measurement
Quenching
Electron microscopes
electron microscopes
quenching
Irradiation
irradiation

Keywords

  • electron beam irradiation
  • cathodoluminescence
  • quantum wells
  • transmission electron microscope
  • microscopy

Cite this

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title = "An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells",
abstract = "The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.",
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language = "English",
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journal = "MRS Online Proceedings Library",
issn = "1946-4274",

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AU - Boyall, N.M.

AU - Durose, K.

AU - Watson, I.M.

PY - 2003

Y1 - 2003

N2 - The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

AB - The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

KW - electron beam irradiation

KW - cathodoluminescence

KW - quantum wells

KW - transmission electron microscope

KW - microscopy

UR - http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2561&DID=118407&action=detail

M3 - Article

VL - 743

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 1946-4274

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