An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

N.M. Boyall; K. Durose; I.M. Watson

An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

N.M. Boyall, K. Durose, I.M. Watson

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Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

Original language	English
Journal	MRS Online Proceedings Library
Volume	743
Publication status	Published - 2003

Keywords

electron beam irradiation
cathodoluminescence
quantum wells
transmission electron microscope
microscopy

Cite this

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title = "An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells",

abstract = "The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.",

keywords = "electron beam irradiation, cathodoluminescence, quantum wells, transmission electron microscope, microscopy",

author = "N.M. Boyall and K. Durose and I.M. Watson",

year = "2003",

language = "English",

volume = "743",

journal = "MRS Online Proceedings Library ",

issn = "0272-9172",

publisher = "Cambridge University Press",

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TY - JOUR

T1 - An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

AU - Boyall, N.M.

AU - Durose, K.

AU - Watson, I.M.

PY - 2003

Y1 - 2003

N2 - The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

AB - The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.

KW - electron beam irradiation

KW - cathodoluminescence

KW - quantum wells

KW - transmission electron microscope

KW - microscopy

UR - http://www.mrs.org/s_mrs/sec_subscribe.asp?CID=2561&DID=118407&action=detail

M3 - Article

SN - 0272-9172

VL - 743

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

ER -

An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

Abstract

Keywords

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