An in-situ TEM-cathodoluminescence study of electron beam degradation of luminescence from GaN and in 0.1Ga 0.9N quantum wells

N.M. Boyall, K. Durose, I.M. Watson

Research output: Contribution to journalArticle

Abstract

The effect of electron beam irradiation on the cathodoluminescence (CL) emission from InGaN/GaN single quantum wells (QW) has been investigated by in-situ measurement of CL in a transmission electron microscope. Analysis of CL quenching over 600s showed that the QW luminescence decayed more quickly than the barrier emission. Both the InGaN and GaN CL decay curves could be fitted to a simple recombination based model suggesting the decay was due to the introduction of non-radiative centres.
Original languageEnglish
JournalMRS Online Proceedings Library
Volume743
Publication statusPublished - 2003

Keywords

  • electron beam irradiation
  • cathodoluminescence
  • quantum wells
  • transmission electron microscope
  • microscopy

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