An experimental investigation of the trade-off between switching losses and EMI generation with hard-switched All-Si, Si-SiC and All-SiC device combinations

Niall Oswald, Philip Anthony, Neville McNeill, Bernard Stark

Research output: Contribution to journalArticle

178 Citations (Scopus)

Abstract

Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.
LanguageEnglish
Pages2393-2407
Number of pages11
JournalIEEE Transactions on Power Electronics
Volume29
Issue number5
DOIs
Publication statusPublished - 31 May 2014
Externally publishedYes

Fingerprint

Signal interference
Silicon carbide
Silicon
Insulated gate bipolar transistors (IGBT)
Diodes
Junction gate field effect transistors
Variable speed drives
Electric potential
MOSFET devices
Recovery

Keywords

  • silicon carbide
  • voltage measurement
  • silicon compounds
  • electromagnetic interference

Cite this

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title = "An experimental investigation of the trade-off between switching losses and EMI generation with hard-switched All-Si, Si-SiC and All-SiC device combinations",
abstract = "Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70{\%} reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.",
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author = "Niall Oswald and Philip Anthony and Neville McNeill and Bernard Stark",
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An experimental investigation of the trade-off between switching losses and EMI generation with hard-switched All-Si, Si-SiC and All-SiC device combinations. / Oswald, Niall; Anthony, Philip; McNeill, Neville; Stark, Bernard.

In: IEEE Transactions on Power Electronics, Vol. 29, No. 5, 31.05.2014, p. 2393-2407.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An experimental investigation of the trade-off between switching losses and EMI generation with hard-switched All-Si, Si-SiC and All-SiC device combinations

AU - Oswald, Niall

AU - Anthony, Philip

AU - McNeill, Neville

AU - Stark, Bernard

PY - 2014/5/31

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AB - Silicon carbide (SiC) switching power devices (MOSFETs, JFETs) of 1200 V rating are now commercially available, and in conjunction with SiC diodes, they offer substantially reduced switching losses relative to silicon (Si) insulated gate bipolar transistors (IGBTs) paired with fast-recovery diodes. Low-voltage industrial variable-speed drives are a key application for 1200 V devices, and there is great interest in the replacement of the Si IGBTs and diodes that presently dominate in this application with SiC-based devices. However, much of the performance benefit of SiC-based devices is due to their increased switching speeds ( di/dt, dv/ dt), which raises the issues of increased electromagnetic interference (EMI) generation and detrimental effects on the reliability of inverter-fed electrical machines. In this paper, the tradeoff between switching losses and the high-frequency spectral amplitude of the device switching waveforms is quantified experimentally for all-Si, Si-SiC, and all-SiC device combinations. While exploiting the full switching-speed capability of SiC-based devices results in significantly increased EMI generation, the all-SiC combination provides a 70% reduction in switching losses relative to all-Si when operated at comparable dv/dt. It is also shown that the loss-EMI tradeoff obtained with the Si-SiC device combination can be significantly improved by driving the IGBT with a modified gate voltage profile.

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