An analysis of high-power IGBT switching under cascade active voltage control

Y. Wang, A. Bryant, P. Palmer, S.J. Finney, M. Abu-khaizaran, G. Li

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feed back-control methods with an Inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC.
LanguageEnglish
Pages861-870
Number of pages10
JournalIEEE Transactions on Industry Applications
Volume45
Issue number2
DOIs
Publication statusPublished - Mar 2009

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Cascades (fluid mechanics)
Insulated gate bipolar transistors (IGBT)
Voltage control
Feedback control
Electric potential
System stability
Power bipolar transistors
Controllers
Experiments

Keywords

  • control system synthesis
  • driver circuits
  • feedback
  • insulated gate bipolar transistors
  • power semiconductor switches
  • stability criteria
  • voltage control

Cite this

Wang, Y. ; Bryant, A. ; Palmer, P. ; Finney, S.J. ; Abu-khaizaran, M. ; Li, G. / An analysis of high-power IGBT switching under cascade active voltage control. In: IEEE Transactions on Industry Applications. 2009 ; Vol. 45, No. 2. pp. 861-870.
@article{786f581fc82d4524990aac73525080d1,
title = "An analysis of high-power IGBT switching under cascade active voltage control",
abstract = "A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feed back-control methods with an Inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC.",
keywords = "control system synthesis, driver circuits, feedback, insulated gate bipolar transistors, power semiconductor switches, stability criteria, voltage control",
author = "Y. Wang and A. Bryant and P. Palmer and S.J. Finney and M. Abu-khaizaran and G. Li",
year = "2009",
month = "3",
doi = "10.1109/TIA.2009.2013595",
language = "English",
volume = "45",
pages = "861--870",
journal = "IEEE Transactions on Industry Applications",
issn = "0093-9994",
number = "2",

}

Wang, Y, Bryant, A, Palmer, P, Finney, SJ, Abu-khaizaran, M & Li, G 2009, 'An analysis of high-power IGBT switching under cascade active voltage control' IEEE Transactions on Industry Applications, vol. 45, no. 2, pp. 861-870. https://doi.org/10.1109/TIA.2009.2013595

An analysis of high-power IGBT switching under cascade active voltage control. / Wang, Y.; Bryant, A.; Palmer, P.; Finney, S.J.; Abu-khaizaran, M.; Li, G.

In: IEEE Transactions on Industry Applications, Vol. 45, No. 2, 03.2009, p. 861-870.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An analysis of high-power IGBT switching under cascade active voltage control

AU - Wang, Y.

AU - Bryant, A.

AU - Palmer, P.

AU - Finney, S.J.

AU - Abu-khaizaran, M.

AU - Li, G.

PY - 2009/3

Y1 - 2009/3

N2 - A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feed back-control methods with an Inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC.

AB - A new gate-drive solution, cascade active voltage control (Cascade AVC), employs classic feed back-control methods with an Inner loop controlling the insulated-gate bipolar-transistor (IGBT) gate voltage and an outer loop controlling the collector voltage, simultaneously. They make the switching performance less dependent on the IGBT itself. Feedback control of IGBTs in the active region does not necessarily slow the switching but introduces stability issues. A detailed stability analysis provides a sensible perspective to judge the system stability and justify the controller design, through considering major operating points and determining corresponding IGBT parameters. Experiments on high-power IGBTs including a 4500-V device show that Cascade AVC offers improved performance and is easier to design than the original AVC.

KW - control system synthesis

KW - driver circuits

KW - feedback

KW - insulated gate bipolar transistors

KW - power semiconductor switches

KW - stability criteria

KW - voltage control

U2 - 10.1109/TIA.2009.2013595

DO - 10.1109/TIA.2009.2013595

M3 - Article

VL - 45

SP - 861

EP - 870

JO - IEEE Transactions on Industry Applications

T2 - IEEE Transactions on Industry Applications

JF - IEEE Transactions on Industry Applications

SN - 0093-9994

IS - 2

ER -